生命周期: | Contact Manufacturer | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.40 |
风险等级: | 5.13 | Is Samacsys: | N |
最大集电极电流 (IC): | 0.25 A | 基于收集器的最大容量: | 2.5 pF |
集电极-发射极最大电压: | 20 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 30 | 最高频带: | ULTRA HIGH FREQUENCY BAND |
JESD-30 代码: | R-XUUC-N2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 200 °C |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | UNCASED CHIP | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | UPPER |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 4500 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
NE24615 | ETC | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 250MA I(C) | TO-33 |
获取价格 |
|
NE24620 | ETC | TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 250MA I(C) | STX-M3 |
获取价格 |
|
NE25118 | NEC | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
获取价格 |
|
NE25118-T1 | NEC | GENERAL PURPOSE DUAL-GATE GaAS MESFET |
获取价格 |
|
NE25137 | NEC | GENERAL PURPOSE DUAL GATE GAAS MESFET |
获取价格 |
|
NE25137 | CEL | RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Ars |
获取价格 |