生命周期: | Obsolete | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 0.125 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL AND P-CHANNEL | 功耗环境最大值: | 2 W |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
NDS9943D84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 20V, 0.125ohm, 2-Element, N-Channel and P-Channel, | |
NDS9943L86Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 20V, 0.125ohm, 2-Element, N-Channel and P-Channel, | |
NDS9943L99Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3A I(D), 20V, 0.125ohm, 2-Element, N-Channel and P-Channel, | |
NDS9945 | FAIRCHILD |
获取价格 |
Dual N-Channel Enhancement Mode Field Effect Transistor | |
NDS9945 | TI |
获取价格 |
3.5A, 60V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | |
NDS9945 | ONSEMI |
获取价格 |
双N沟道增强模式场效应晶体管 | |
NDS9945/D84Z | TI |
获取价格 |
3.5A, 60V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | |
NDS9945/L86Z | TI |
获取价格 |
3.5A, 60V, 0.1ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET | |
NDS9945/L99Z | TI |
获取价格 |
3500mA, 60V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | |
NDS9945/S62Z | TI |
获取价格 |
3500mA, 60V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |