Datasheet > NDF02N60Z_14

NDF02N60Z_14

更新时间： 2024-01-12 21:58:29

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	148K
描述
N-Channel Power MOSFET

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中文翻译

获取价格

数据手册

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NDF02N60Z_14 数据手册

NDF02N60Z, NDD02N60Z

N-Channel Power MOSFET

600 V, 4.8 W

Features

• Low ON Resistance

• Low Gate Charge

www.onsemi.com

• ESD Diode−Protected Gate

• 100% Avalanche Tested

(MAX) @ 1 A

DS(on)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

DSS

600 V

4.8 W

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

N−Channel

Rating

Symbol

NDF

NDD

Unit

D (2)

Drain−to−Source Voltage

600

DSS

Continuous Drain Current R

(Note 1)

2.4

1.6

2.2

1.4

Continuous Drain Current R

T = 100°C (Note 1)

G (1)

Pulsed Drain Current, V @ 10 V

Power Dissipation R

S (3)

Gate−to−Source Voltage

Single Pulse Avalanche Energy,

120

= 2.4 A

ESD (HBM)

2500

esd

(JESD 22−A114)

RMS Isolation Voltage

ISO

4500

(t = 0.3 sec., R.H. ≤ 30%,

T = 25°C) (Figure 17)

Peak Diode Recovery (Note 2)

dv/dt

4.5

2.4

V/ns

Continuous Source Current (Body

Diode)

NDF02N60ZG,

NDF02N60ZH

TO−220FP

Maximum Temperature for Soldering

Leads

260

°C

CASE 221AH

Operating Junction and

T , T

−55 to 150

stg

Storage Temperature Range

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Limited by maximum junction temperature

2. I = 2.4 A, di/dt ≤ 100 A/ms, V ≤ BV

, T = +150°C

DSS

NDD02N60ZT4G

DPAK

CASE 369AA

NDD02N60Z−1G

IPAK

CASE 369D

ORDERING AND MARKING INFORMATION

See detailed ordering, marking and shipping information on

page 7 of this data sheet.

Publication Order Number:

January, 2014 − Rev. 8

NDF02N60Z/D

12 3 4 5 6 7...10

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