是否无铅: | 不含铅 | 生命周期: | End Of Life |
零件包装代码: | TO-220AB | 包装说明: | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE 221AH-01, TO-220, FULL PACK-3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | Factory Lead Time: | 1 week |
风险等级: | 5.19 | 雪崩能效等级(Eas): | 120 mJ |
外壳连接: | ISOLATED | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (Abs) (ID): | 2.4 A |
最大漏极电流 (ID): | 2.4 A | 最大漏源导通电阻: | 4.8 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 24 W |
最大脉冲漏极电流 (IDM): | 10 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Powers | 表面贴装: | NO |
端子面层: | Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NDF02N60ZH | ONSEMI |
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