Datasheet > NDF03N60ZH

NDF03N60ZH

更新时间： 2024-01-30 15:41:23

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
10页	147K
描述
N-Channel Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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NDF03N60ZH 数据手册

NDF03N60Z, NDD03N60Z

N-Channel Power MOSFET

600 V, 3.6 W

Features

• Low ON Resistance

• Low Gate Charge

www.onsemi.com

• ESD Diode−Protected Gate

• 100% Avalanche Tested

(MAX) @ 1.2 A

DS(on)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

DSS

600 V

3.6 W

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

N−Channel

Rating

Symbol

NDF

NDD

Unit

D (2)

Drain−to−Source Voltage

Continuous Drain Current R

600

DSS

3.1

(Note 1)

2.6

Continuous Drain Current R

2.9

(Note 1)

1.65

G (1)

T = 100°C

Pulsed Drain Current, V @ 10 V

Power Dissipation R

S (3)

Gate−to−Source Voltage

Single Pulse Avalanche Energy,

100

= 3.0 A

ESD (HBM) (JESD 22−A114)

3000

esd

RMS Isolation Voltage (t = 0.3 sec.,

ISO

4500

R.H. ≤ 30%, T = 25°C) (Figure 17)

Peak Diode Recovery (Note 2)

dv/dt

4.5

3.0

V/ns

Continuous Source Current (Body

Diode)

NDF03N60ZG,

NDF03N60ZH

TO−220FP

Maximum Temperature for Soldering

Leads

260

°C

Operating Junction and

Storage Temperature Range

T , T

−55 to 150

stg

CASE 221AH

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Limited by maximum junction temperature

2. I = 3.0 A, di/dt ≤ 100 A/ms, V ≤ BV

, T = +150°C

DSS

NDD03N60Z−1G

IPAK

NDD03N60ZT4G

DPAK

CASE 369D

CASE 369AA

MARKING AND ORDERING INFORMATION

See detailed ordering and shipping information on page 7 of

this data sheet.

Publication Order Number:

January, 2015 − Rev. 8

NDF03N60Z/D

12 3 4 5 6 7...10

中文翻译

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NDF03N60ZH 替代型号

型号	品牌	替代类型	描述	数据表
NDF03N60ZG	ONSEMI	类似代替	N-Channel Power MOSFET 600 V, 3.3

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