是否无铅: | 不含铅 | 生命周期: | End Of Life |
零件包装代码: | TO-220AB | 包装说明: | HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, CASE 221AH-01, TO-220, FULL PACK-3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.18 |
雪崩能效等级(Eas): | 120 mJ | 外壳连接: | ISOLATED |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (Abs) (ID): | 4.8 A | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 2 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 30 W | 最大脉冲漏极电流 (IDM): | 20 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Powers |
表面贴装: | NO | 端子面层: | Tin (Sn) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
NDF04N60ZH | ONSEMI |
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N-Channel Power MOSFET 600 V, 2.0 Ohm |
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NDF04N60ZH | ONSEMI |
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N-Channel Power MOSFET 600 V, 2.0 Ohm |
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NDF05N50ZH | ONSEMI |
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NDF0610/D27Z | TI |
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180mA, 60V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
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