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NCP3420MNR2G

更新时间： 2024-09-19 10:28:07
品牌 Logo 应用领域
安森美 - ONSEMI 驱动器转换器
页数 文件大小 规格书
9页 144K
描述
MOSFET Driver with Dual Outputs for Synchronous Buck Converters

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中文翻译

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NCP3420MNR2G 技术参数

是否无铅： 不含铅生命周期：Obsolete
零件包装代码：DFN包装说明：HVSON, SOLCC8,.12,20
针数：8Reach Compliance Code：unknown
ECCN代码：EAR99HTS代码：8542.39.00.01
风险等级：5.78高边驱动器：YES
接口集成电路类型：HALF BRIDGE BASED MOSFET DRIVERJESD-30 代码：S-XDSO-N8
长度：3 mm湿度敏感等级：1
功能数量：1端子数量：8
最高工作温度：85 °C最低工作温度：
封装主体材料：UNSPECIFIED封装代码：HVSON
封装等效代码：SOLCC8,.12,20封装形状：SQUARE
封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度（摄氏度）：NOT SPECIFIED
电源：12 V认证状态：Not Qualified
座面最大高度：1 mm子类别：MOSFET Drivers
最大供电电压：13.2 V最小供电电压：4.6 V
标称供电电压：12 V表面贴装：YES
温度等级：OTHER端子面层：Nickel/Gold/Palladium (Ni/Au/Pd)
端子形式：NO LEAD端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：3 mmBase Number Matches：1

NCP3420MNR2G 数据手册

 浏览型号NCP3420MNR2G的Datasheet PDF文件第2页浏览型号NCP3420MNR2G的Datasheet PDF文件第3页浏览型号NCP3420MNR2G的Datasheet PDF文件第4页浏览型号NCP3420MNR2G的Datasheet PDF文件第5页浏览型号NCP3420MNR2G的Datasheet PDF文件第6页浏览型号NCP3420MNR2G的Datasheet PDF文件第7页 
NCP3420  
MOSFET Driver with Dual  
Outputs for Synchronous  
Buck Converters  
The NCP3420 is a single Phase 12 V MOSFET gate driver  
optimized to drive the gates of both high−side and low−side power  
MOSFETs in a synchronous buck converter. The high−side and  
low−side driver is capable of driving a 3000 pF load with a 30 ns  
propagation delay and a 20 ns transition time.  
With a wide operating voltage range, high or low side MOSFET  
gate drive voltage can be optimized for the best efficiency. Internal  
adaptive nonoverlap circuitry further reduces switching losses by  
preventing simultaneous conduction of both MOSFETs.  
http://onsemi.com  
MARKING  
DIAGRAMS  
8
3420  
ALYW  
SO−8  
D SUFFIX  
CASE 751  
8
G
1
1
The floating top driver design can accommodate VBST voltages as  
high as 35 V, with transient voltages as high as 40 V. Both gate outputs  
can be driven low by applying a low logic level to the Output Disable  
(OD) pin. An Undervoltage Lockout function ensures that both driver  
outputs are low when the supply voltage is low, and a Thermal  
Shutdown function provides the IC with overtemperature protection.  
1
8
DFN8  
MN SUFFIX  
CASE 506BJ  
3420  
ALYWG  
G
1
A
L
= Assembly Location  
= Wafer Lot  
Y
= Year  
Features  
W = Work Week  
G
• Thermal Shutdown for System Protection  
• Internal Pulldown Resistor Suppresses Transient Turn On of Either  
MOSFET  
= Pb−Free Package  
PIN CONNECTIONS  
• Anti Cross−Conduction Protection Circuitry  
1
8
BST  
IN  
DRVH  
SWN  
• One Input Signal Controls Both the Upper and Lower Gate Outputs  
• Output Disable Control Turns Off Both MOSFETs  
• Complies with VRM10.x and VRM11.x Specifications  
• Undervoltage Lockout  
OD  
PGND  
DRVL  
V
CC  
1
8
• Thermally Enhanced Package Available  
• These are Pb−Free Devices  
BST  
IN  
DRVH  
SWN  
OD  
PGND  
V
CC  
DRVL  
(Top View)  
ORDERING INFORMATION  
†
Device  
Package  
Shipping  
2500 Tape & Reel  
3000 Tape & Reel  
NCP3420DR2G  
SO−8  
(Pb−Free)  
NCP3420MNR2G  
DFN8  
(Pb−Free)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
December, 2009 − Rev. 3  
NCP3420/D  
1234567...9

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