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NCP348AEMTTBG PDF预览

NCP348AEMTTBG

更新时间: 2024-09-19 12:03:31
品牌 Logo 应用领域
安森美 - ONSEMI 控制器
页数 文件大小 规格书
13页 488K
描述
Positive Overvoltage Protection Controller with Internal Low RON NMOS FET and Status FLAG

NCP348AEMTTBG 技术参数

是否无铅: 不含铅生命周期:Contact Manufacturer
零件包装代码:DFN包装说明:HVSON,
针数:10Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.39.00.01
Factory Lead Time:1 week风险等级:4.44
高边驱动器:YES接口集成电路类型:HALF BRIDGE BASED MOSFET DRIVER
JESD-30 代码:R-XDSO-N10JESD-609代码:e3
长度:2.5 mm湿度敏感等级:1
功能数量:1端子数量:10
最高工作温度:85 °C最低工作温度:-40 °C
封装主体材料:UNSPECIFIED封装代码:HVSON
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):260认证状态:Not Qualified
座面最大高度:0.8 mm最大供电电压:28 V
最小供电电压:1.2 V标称供电电压:5 V
表面贴装:YES温度等级:INDUSTRIAL
端子面层:Tin (Sn)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:40宽度:2 mm
Base Number Matches:1

NCP348AEMTTBG 数据手册

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NCP348, NCP348AE  
Positive Overvoltage  
Protection Controller with  
Internal Low RON NMOS FET  
and Status FLAG  
http://onsemi.com  
MARKING  
The NCP348 is able to disconnect the systems from its output pin  
in case wrong input operating conditions are detected. The system is  
positive overvoltage protected up to +28 V.  
Due to this device using internal NMOS, no external device is  
necessary, reducing the system cost and the PCB area of the  
application board.  
DIAGRAM  
BAxM  
G
WDFN10  
MT SUFFIX  
CASE 516AA  
The NCP348 is able to instantaneously disconnect the output from  
the input, due to integrated Low R Power NMOS (65 mW), if the  
ON  
input voltage exceeds the overvoltage threshold (OVLO) or  
undervoltage threshold (UVLO).  
BAI = NCP348  
BAJ = NCP348AE  
At powerup (EN pin = low level), the V turns on 50 ms after the  
out  
M
= Date Code  
V
in  
exceeds the undervoltage threshold.  
G
= PbFree Package  
The NCP348 provides a negative going flag (FLAG) output, which  
alerts the system that a fault has occurred.  
In addition, the device has ESDprotected input (15 kV Air) when  
bypassed with a 1.0 mF or larger capacitor.  
PIN CONNECTIONS  
IN  
1
2
10 EN  
Features  
PAD1  
GND  
GND  
9
NC  
Overvoltage Protection up to 28 V  
OnChip Low R  
NMOS Transistor: 65 mW  
DS(on)  
FLAG  
IN  
3
4
5
8
7
6
NC  
Internal Charge Pump  
OUT  
OUT  
PAD2  
IN  
Overvoltage Lockout (OVLO)  
Undervoltage Lockout (UVLO)  
Internal 50 ms Startup Delay  
Alert FLAG Output  
IN  
(Top View)  
Shutdown EN Input  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 12 of this data sheet.  
Compliance to IEC6100042 (Level 4)  
8.0 kV (Contact)  
15 kV (Air)  
ESD Ratings: Machine Model = B  
Human Body Model = 3  
10 Lead WDFN 2.5x2 mm Package  
This is a PbFree Device  
Applications  
Cell Phones  
Camera Phones  
Digital Still Cameras  
Personal Digital Applications  
MP3 Players  
©
Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
May, 2010 Rev. 6  
NCP348/D  

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