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NCP349MNTBG PDF预览

NCP349MNTBG

更新时间： 2024-09-20 11:01:39
品牌 Logo 应用领域
安森美 - ONSEMI 驱动光电二极管接口集成电路驱动器
页数 文件大小 规格书
12页 306K
描述
Positive Overvoltage Protection Circuit with Internal Low Ron NMOS FET

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中文翻译

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NCP349MNTBG 技术参数

是否无铅： 不含铅生命周期：Active
零件包装代码：DFN包装说明：HVSON,
针数：6Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8542.39.00.01
Factory Lead Time：6 weeks风险等级：1.62
Samacsys Description：ON Semiconductor Intelligent Power Switch高边驱动器：NO
接口集成电路类型：AND GATE BASED MOSFET DRIVERJESD-30 代码：R-PDSO-N6
JESD-609代码：e3长度：2 mm
湿度敏感等级：1功能数量：1
端子数量：6最高工作温度：85 °C
最低工作温度：-40 °C封装主体材料：PLASTIC/EPOXY
封装代码：HVSON封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified座面最大高度：1 mm
最大供电电压：28 V最小供电电压：1.2 V
标称供电电压：5 V表面贴装：YES
温度等级：INDUSTRIAL端子面层：Tin (Sn)
端子形式：NO LEAD端子节距：0.5 mm
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
宽度：1.6 mm

NCP349MNTBG 数据手册

 浏览型号NCP349MNTBG的Datasheet PDF文件第2页浏览型号NCP349MNTBG的Datasheet PDF文件第3页浏览型号NCP349MNTBG的Datasheet PDF文件第4页浏览型号NCP349MNTBG的Datasheet PDF文件第5页浏览型号NCP349MNTBG的Datasheet PDF文件第6页浏览型号NCP349MNTBG的Datasheet PDF文件第7页 
NCP349  
Positive Overvoltage  
Protection Controller with  
Internal Low RON NMOS FET  
The NCP349 is able to disconnect the systems from its output pin  
when wrong input operating conditions are detected. The system is  
positive overvoltage protected up to +28 V.  
http://onsemi.com  
This device uses an internal NMOS and therefore, no external  
device is necessary, reducing the system cost and the PCB area of the  
application board.  
6
1
The NCP349 is able to instantaneously disconnect the output from  
the input, due to integrated Low R Power NMOS (65 mW), if the  
input voltage exceeds the overvoltage threshold (OVLO) or falls  
below the undervoltage threshold (UVLO).  
DFN6  
MN SUFFIX  
CASE 506BM  
ON  
At powerup (EN pin = low level), the V turns on t time after  
out  
on  
MARKING DIAGRAM  
the V exceeds the undervoltage threshold.  
in  
The NCP349 provides a negative going flag (FLAG) output, which  
alerts the system that a fault has occurred.  
In addition, the device has ESD−protected input (15 kV Air) when  
bypassed with a 1.0 mF or larger capacitor.  
1
XX MG  
G
Features  
XX = Specific Device Code  
M
G
= Date Code  
= Pb−Free Package  
• Overvoltage Protection up to 28 V  
• On−Chip Low R  
NMOS Transistor: 65 mW  
DS(on)  
• Internal Charge Pump  
PIN CONNECTIONS  
• Overvoltage Lockout (OVLO)  
• Undervoltage Lockout (UVLO)  
• Soft−Start  
IN  
GND  
1
2
3
6
5
EN  
PAD1  
IN  
OUT  
• Alert FLAG Output  
• Shutdown EN Input  
FLAG  
4
OUT  
• Compliance to IEC61000−4−2 (Level 4)  
(Top View)  
8.0 kV (Contact)  
15 kV (Air)  
ORDERING INFORMATION  
See detailed ordering, marking and shipping information in the  
package dimensions section on page 11 of this data sheet.  
• ESD Ratings: Machine Model = B  
Human Body Model = 2  
• DFN6 1.6x2 mm Package  
• This is a Pb−Free Device  
Applications  
• Cell Phones  
• Camera Phones  
• Digital Still Cameras  
• Personal Digital Applications  
• MP3 Players  
©
Semiconductor Components Industries, LLC, 2012  
1
Publication Order Number:  
September, 2012 − Rev. 3  
NCP349/D  
1234567...12

中文翻译

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