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NB7L216MN PDF预览

NB7L216MN

更新时间: 2024-09-26 03:20:55
品牌 Logo 应用领域
安森美 - ONSEMI 转换器接口集成电路时钟
页数 文件大小 规格书
12页 265K
描述
2.5V/3.3V, 12Gb/s Multi Level Clock/Data Input to RSECL, High Gain Receiver/Buffer/Translator with Internal Termination

NB7L216MN 数据手册

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NB7L216  
2.5V/3.3V, 12Gb/s Multi  
Level Clock/Data Input to  
RSECL, High Gain  
Receiver/Buffer/Translator  
with Internal Termination  
http://onsemi.com  
MARKING DIAGRAM*  
Description  
16  
The NB7L216 is a differential receiver/driver with high gain output  
targeted for high frequency applications. The device is functionally  
equivalent to the NBSG16 but with much higher gain output. This  
highly versatile device provides 35 dB of gain up to 7 GHz.  
Inputs incorporate internal 50 W termination resistors and accept  
Negative ECL (NECL), Positive ECL (PECL), LVTTL, LVCMOS,  
CML, or LVDS. Outputs are Reduced Swing ECL (RSECL), 400 mV.  
1
NB7L  
216  
QFN−16  
MN SUFFIX  
CASE 485G  
ALYWG  
G
A
L
Y
W
G
= Assembly Location  
= Wafer Lot  
The V pin is an internally generated voltage supply available to  
BB  
= Year  
this device only. V is used as a reference voltage for single−ended  
= Work Week  
= Pb−Free Package  
BB  
NECL or PECL inputs. For all single−ended input conditions, the  
(Note: Microdot may be in either location)  
unused complementary differential input should be connected to V  
BB  
as a switching reference voltage. V may also rebias AC coupled  
BB  
*For additional marking information, refer to  
Application Note AND8002/D.  
inputs. When used, decouple V via a 0.01 mF capacitor and limit  
BB  
current sourcing or sinking to 0.5 mA. When not used, V output  
should be left open.  
BB  
VTD  
Application notes, models and support documentation are available  
at www.onsemi.com.  
50 W  
Q
Q
D
D
Features  
High Gain of 35 dB from DC to 7 GHz Typical  
High IIP3: 0 dBm Typical  
50 W  
20 mV Minimum Input Voltage Swing  
Maximum Input Clock Frequency up to 8.5 GHz  
Maximum Input Data Rate up to 12 Gb/s Typical  
<0.5 ps of RMS Clock Jitter  
VTD  
Figure 1. Functional Block Diagram  
<9 ps of Data Dependent Jitter  
120 ps Typical Propagation Delay  
30 ps Typical Rise and Fall Times  
Device DDJ = 3 ps  
RSPECL Output with Operating Range: V = 2.375 V to 3.465 V  
CC  
with V = 0 V  
EE  
RSNECL Output with RSNECL or NECL Inputs with Operating  
Range: V = 0 V with V = −2.375 V to −3.465 V  
CC  
EE  
RSECL Output Level (400 mV Peak−to−Peak Output),  
50 W Internal Input Termination Resistors (Temperature−Coefficient  
of < 6.38 mW/°C)  
VBB – ECL Reference Voltage Output  
Pb−Free Packages are Available  
TIME (17 ps/div)  
Figure 2. Typical Output Waveform at  
12 Gb/s with PRBS 223−1 (VINPP = 400 mV,  
Input Signal DDJ = 12 ps)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 11 of this data sheet.  
©
Semiconductor Components Industries, LLC, 2006  
1
Publication Order Number:  
August, 2006 − Rev. 2  
NB7L216/D  

NB7L216MN 替代型号

型号 品牌 替代类型 描述 数据表
NB7L216MNR2G ONSEMI

完全替代

2.5V/3.3V, 12Gb/s Multi Level Clock/Data Input to RSECL, High Gain Receiver/Buffer/Transla
NB7L216MNG ONSEMI

完全替代

2.5V/3.3V, 12Gb/s Multi Level Clock/Data Input to RSECL, High Gain Receiver/Buffer/Transla

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