Datasheet > MURD860CTR

MURD860CTR

更新时间： 2024-11-19 01:10:15

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	730K
描述
8.0 Amperes Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MURD860CTR 数据手册

MURD820CTR thru MURD860CTR

MURD820CTR/MURD830CTR/MURD840CTR/MURD860CTR

Pb Free Plating Product

8.0 Amperes Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

TO-252/DPAK

Unit : inch (mm)

Latest GPP EPI P/G Technology

(

)

(

)

.264 6.7

.098 2.5

(

.248 6.3

(

.082 2.1

Good Soft Recovery Characteristics

Ideally Suited for Automatic Assembly

Low Forward Voltage

(

)

.024 0.6

(

)

.216 5.5

(

.200 5.1

(

.016 0.4

Features

High Surge Current Capability

Low Leakage Current

(

)

.106 2.7

(

.090 2.3

Freewheeling, Snubber, Clamp

Inversion Welder

PFC

(

.02 .5

)

(

)

.032 0.8

(

.012 0.3

(

.09 .09

.071 1.8

Applications

( )

.051 1.3

(

) (

2.3 2.3

)

Plating Power Supply

Ultrasonic Cleaner and Welder

Converter & Chopper

Doubler

Tandem Polarity Tandem Polarity

Suffix "CTD" Suffix "CTS"

Series

Negative

Positive

UPS/LED SMPS/HID

Common Cathode Common Anode

Suffix "CT" Suffix "CTR"

Maximum Ratings and Electrical Characteristics ^@T_A^{=25°C unless otherwise specified}

Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.

Characteristic

Symbol

Unit

MURD820CTR MURD830CTR MURD840CTR MURD860CTR

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

200

140

300

210

400

280

600

420

RMS Reverse Voltage

VR(RMS)

Average Rectified Output Current

@T_C= 100°C

Total Device

Per Diode

8.0

4.0

Non-Repetitive Peak Forward Surge Current

8.3ms Single Half Sine-Wave Superimposed on

Rated Load (JEDEC Method)

IFSM

100

Forward Voltage per diode

@I_F= 4.0A

VFM

IRM

0.98

1.30

1.70

Peak Reverse Current

At Rated DC Blocking Voltage

@T_C= 25°C

@T_C= 100°C

5.0

100

µA

Reverse Recovery Time (Note 1)

t_rr

Typical Junction Capacitance (Note 2)

Thermal Resistance Junction to Ambient (Note 3)

Thermal Resistance Junction to Lead (Note 3)

R^θJA

R^θJC

6.5

°C/W

°C

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

Note: 1. Measured with I_F= 0.5A, I_R= 1.0A, I_RR= 0.25A.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.

3. Mounted on PCB with minimum recommended pad sizes per diode.

Page 1/2

http://www.thinkisemi.com.tw/

Rev.08T

中文翻译

下载PDF

与MURD860CTR相关器件

型号	品牌	获取价格	描述	数据表
MURD860S	GOOD-ARK	获取价格	快恢复整流管
MURD8H60	CJ	获取价格	TO-252-2L
MURF10005	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF10005R	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF10010	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF10010R	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF10020	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF10020R	GENESIC	获取价格	Silicon Super Fast Recovery Diode
MURF1005	DIOTECH	获取价格	SUPER FAST RECOVERY SILICON RECTIFIER
MURF1005-BP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 50V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN

与MURD860CTR相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

MURD860CTR

MURD860CTR 数据手册

与MURD860CTR相关器件

与MURD860CTR相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MURD860CTR

MURD860CTR 数据手册

与MURD860CTR相关器件

与MURD860CTR相关文章

您还可以找

您在本页遇到什么问题？