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MURF1010-BP PDF预览

MURF1010-BP

更新时间: 2024-11-18 15:45:11
品牌 Logo 应用领域
美微科 - MCC 局域网功效瞄准线二极管
页数 文件大小 规格书
2页 719K
描述
Rectifier Diode, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN

MURF1010-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AC
包装说明:R-PSFM-T2针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
JESD-609代码:e3最大非重复峰值正向电流:150 A
元件数量:1相数:1
端子数量:2最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.05 µs表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MURF1010-BP 数据手册

 浏览型号MURF1010-BP的Datasheet PDF文件第2页 
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
MURF1005  
THRU  
MURF1080  
Features  
·
Low power loss, high efficiency  
·
·
·
Low forward voltage, high current capability  
High surge capacity  
Ultra Fast recovery times, high voltage  
10Amp Isolation  
Ultra FastSwitching  
Rectif ier  
50 to 800 Volts  
Maximum Ratings  
·
·
Operating Juncti on Temperature:-55°C to +150°C  
Storage Temperature: -55°C to +150°C  
ITO-220AC  
Microsemi  
Catalog  
Device  
Marking  
Maximum  
Recurrent  
Peak  
Maximum Maximum  
RMS  
Voltage  
B
K
L
DC  
Blocking  
Voltage  
C
Number  
D
Reverse  
Voltage  
50V  
A
J
MURF1005 U1005  
MURF1010 U1010  
MURF1020 U1020  
MURF1030 U1030  
MURF1040 U1040  
MURF1060 U1060  
MURF1080 U1080  
35V  
70V  
50V  
PIN  
1
2
100V  
100V  
200V  
300V  
400V  
600V  
800V  
E
I
200V  
300V  
400V  
600V  
140V  
210V  
280V  
420V  
560V  
F
H
800V  
G
M
Electrical Characteristics @ 25°C Unless Otherwise Specified  
PIN 1  
PIN 2  
Average Forward  
Current  
IF(AV)  
10.0A  
TC = 100°C  
Peak Forward Surge  
Current  
IFSM  
150A 8.3 ms, half sine  
Maximum Forward  
Voltage Drop Per  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
ꢀ ꢀ ꢀ ꢀ  
Element  
VF  
1.00V IFM = 10 A  
INCHES  
MIN  
.583  
---  
.100  
.248  
MM  
F1005-F1020  
1.30V  
DIM  
A
B
C
D
E
F
G
H
I
MAX  
MIN  
14.80  
---  
MAX  
TJ = 25°C  
F1030-F1040  
F1060-F1080  
.606  
.406  
.112  
15.40  
10.30  
2.85  
6.90  
4.10  
1.70V  
2.55  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
Maximum Reverse  
Recovery Time  
F1005-F1040  
.272  
.161  
6.30  
---  
IR  
10 uA TA = 25°C  
---  
.512  
.543  
13.00  
13.80  
500uA  
TA = 125°C  
.200  
5.10  
---  
---  
.035  
---  
0.90  
0.80  
3.40  
4.80  
3.10  
2.90  
.032  
.134  
---  
3.00  
J
K
L
M
.118  
---  
---  
.098  
.189  
---  
50ns  
100ns  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
Trr  
.123  
---  
.114  
2.50  
F1060-F1080  
www.mccsemi.com  
Revision: 3  
2003/04/30  

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