Datasheet > MURF1020CTR

MURF1020CTR

更新时间： 2024-11-21 12:56:19

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	608K
描述
10.0 Ampere Insulated Common Anode Ultra Fast Recovery Rectifier

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中文翻译

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数据手册

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MURF1020CTR 数据手册

MURF1020CTR thru MURF1060CTR

Pb Free Plating Product

10.0 Ampere Insulated Common Anode Ultra Fast Recovery Rectifier

Unit : inch (mm)

ITO-220AB

Features

.189(4.8)

.165(4.2)

.406(10.3)

.381(9.7)

.134(3.4)

.118(3.0)

¬ Fast switching for high efficiency

¬ Low forward voltage drop

¬ High current capability

¬ Low reverse leakage current

¬ High surge current capability

.130(3.3)

.114(2.9)

.098(2.5)

.071(1.8)

Mechanical Data

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

¬ Case:ITO-220AB Isolated/Insulated

¬ Epoxy: UL 94V-0 rate flame retardant

¬ Terminals: Solderable per MIL-STD-202

method 208

.032(.8)

MAX

(2.55)

¬ Polarity:As marked on diode body

¬ Mounting position: Any

¬ Weight: 2.2 gram approximately

Case

Negative

Common Anode Tandem Polarity

Suffix "CTR"

Positive

Doubler

Common Cathode

Suffix "CT"

Suffix "CTD"

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

UNIT

SYMBOL

MURF1040CTR MURF1060CTR

MURF1020CTR

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

Current TC=100^oC

10.0

100

1.3

IF(AV)

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

IFSM

Maximum Instantaneous Forward Voltage

@ 5.0 A

1.7

0.98

Maximum DC Reverse Current @TJ=25^oC

At Rated DC Blocking Voltage @TJ=125^oC

10.0

250

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Trr

R JC

2.2

Operating Junction and Storage

Temperature Range

-55 to +150

TJ, TSTG

NOTES : (1) Reverse recovery test conditions I^F= 0.5A, I^R= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to case.

Page 1/2

http://www.thinkisemi.com/

Rev.02

中文翻译

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与MURF1020CTR相关器件

型号	品牌	获取价格	描述	数据表
MURF1020CTR_18	THINKISEMI	获取价格	10.0 Amperes Insulated Dual Common Anode Ultra Fast Recovery Half Bridge Rectifiers
MURF1020CTS	THINKISEMI	获取价格	10 Amperes Insulated Dual Series Connection Ultra Fast Recovery Half Bridge Rectifiers
MURF1020E	SAMTEC	获取价格	10.0 Ampere Insulated Dual Series Connection Ultra Fast Recovery Rectifiers
MURF1030	DIOTECH	获取价格	SUPER FAST RECOVERY SILICON RECTIFIER
MURF1030	MDD	获取价格	ULTRAFAST RECOVERY RECTIFIERS
MURF1030-BP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 300V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN
MURF1030CT	DIOTECH	获取价格	SUPER FAST RECOVERY SILICON RECTIFIER
MURF1030CT	MCC	获取价格	10 Amp Isolation Super Fast Recovery Rectifier 50 to 400 Volts
MURF1030CT	EIC	获取价格	Dual Ultrafast Plastic Rectifiers
MURF1030CT-BP	MCC	获取价格	Rectifier Diode, 1 Phase, 2 Element, 10A, 300V V(RRM), Silicon, TO-220AB, PLASTIC, ITO-220

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