Datasheet > MURF1040CT

MURF1040CT

更新时间： 2024-11-18 12:57:39

品牌	Logo	应用领域
THINKISEMI		二极管瞄准线功效局域网
页数	文件大小	规格书
2页	757K
描述
10 Amperes Insulated Dual Common Cathode Ultra Fast Recovery Half Bridge Rectifiers

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中文翻译

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MURF1040CT 数据手册

MURF1020CT thru MURF1060CT

MURF1020CT/MURF1040CT/MURF1060CT

Pb Free Plating Product

10 Amperes Insulated Dual Common Cathode Ultra Fast Recovery Half Bridge Rectifiers

ITO-220AB/TO-220F-3L

Unit : inch (mm)

Features

ꢀ

Fast switching for high efficiency

.189(4.8)

.165(4.2)

.406(10.3)

.381(9.7)

.134(3.4)

.118(3.0)

Low forward voltage drop

High current capability

Low reverse leakage current

High surge current capability

.130(3.3)

.114(2.9)

Application

Automotive Inverters and Solar Inverters

ꢀ

Plating Power Supply,SMPS and UPS

.114(2.9)

.098(2.5)

.071(1.8)

.055(1.4)

Car Audio Amplifiers and Sound Device Systems

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

.032(.8)

MAX

Mechanical Data

(2.55)

ꢀ

Case: ITO-220AB full plastic isolated package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

(2.55)

Case

ꢀ

Polarity: As marked on diode body

Mounting position: Any

Weight: 1.75 gram approximately

Doubler

Tandem Polarity Tandem Polarity

Suffix "CTD" Suffix "CTS"

Series

Negative

Common Cathode Common Anode

Suffix "CT" Suffix "CTA"

Positive

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

℃

Rating at 25 ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

UNIT

SYMBOL

MURF1040CT

MURF1020CT

MURF1060CT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

200

140

200

400

280

400

600

420

600

Maximum DC Blocking Voltage

Maximum Average Forward Rectified

10.0

150

1.3

IF(AV)

(Total Device 2*5A=10A)

Current TC=100 C

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

IFSM

Maximum Instantaneous Forward Voltage

1.7

0.98

(Both Diode/Per Diode/Per Leg)

@ 5.0 A

Maximum DC Reverse Current @TJ=25^oC

At Rated DC Blocking Voltage @TJ=125^oC

5.0

μA

100

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Trr

℃

R JC

3.0

Operating Junction and Storage

Temperature Range

-55 to +150

℃

TJ, TSTG

NOTES : (1) Reverse recovery test conditions I^F= 0.5A, I^R= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to case.

Page 1/2

http://www.thinkisemi.com.tw/

Rev.08T

中文翻译

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与MURF1040CT相关器件

型号	品牌	获取价格	描述	数据表
MURF1040CTA	THINKISEMI	获取价格	10 Amperes Insulated Dual Common Anode Ultra Fast Recovery Half Bridge Rectifiers
MURF1040CT-BP	MCC	获取价格	Rectifier Diode, 1 Phase, 2 Element, 10A, 400V V(RRM), Silicon, TO-220AB, PLASTIC, ITO-220
MURF1040CTD	THINKISEMI	获取价格	10 Amperes Insulated Dual Doubler Polarity Ultra Fast Recovery Half Bridge Rectifiers
MURF1040CTR	THINKISEMI	获取价格	10.0 Ampere Insulated Common Anode Ultra Fast Recovery Rectifier
MURF1040CTS	THINKISEMI	获取价格	10 Amperes Insulated Dual Series Connection Ultra Fast Recovery Half Bridge Rectifiers
MURF1040E	SAMTEC	获取价格	10.0 Ampere Insulated Dual Series Connection Ultra Fast Recovery Rectifiers
MURF1050	MDD	获取价格	ULTRAFAST RECOVERY RECTIFIERS
MURF1060	DIOTECH	获取价格	SUPER FAST RECOVERY SILICON RECTIFIER
MURF1060	MDD	获取价格	ULTRAFAST RECOVERY RECTIFIERS
MURF1060-BP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 600V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN

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