MURF1080CTA thru MURF10120CTA
Pb
MURF1080CTA/MURF10100CTA/MURF10120CTA
Pb Free Plating Product
10.0 Ampere Insulated Common Anode Ultra Fast Recovery Rectifiers
ITO-220AB/TO-220F-3L
Unit : inch (mm)
Features
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Fast switching for high efficiency
Low forward voltage drop
High current capability
.189(4.8)
.406(10.3)
.165(4.2)
.381(9.7)
.134(3.4)
.130(3.3)
.118(3.0)
.114(2.9)
Low reverse leakage current
High surge current capability
Application
Automotive Inverters and Solar Inverters
ꢀ
ꢀ
ꢀ
Plating Power Supply,SMPS and UPS
Car Audio Amplifiers and Sound Device Systems
.114(2.9)
.098(2.5)
.071(1.8)
.055(1.4)
.055(1.4)
.039(1.0)
.035(0.9)
.011(0.3)
.032(.8)
MAX
Mechanical Data
.1
(2.55)
.1
ꢀ
ꢀ
ꢀ
Case: Insulated ITO-220AB fully plastic isolated package
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
(2.55)
Case
Case
Case
Case
ꢀ
ꢀ
ꢀ
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.0 gram approximately
Doubler
Tandem Polarity Tandem Polarity
Suffix "CTD" Suffix "CTS"
Series
Negative
Common Cathode Common Anode
Suffix "CT" Suffix "CTA"
Positive
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
UNIT
SYMBOL
MURF1080CTA MURF10100CTA MURF10120CTA
V
V
V
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
V
RRM
RMS
800
560
800
1000
700
1200
840
V
Maximum DC Blocking Voltage
V
DC
1000
1200
Maximum Average Forward Rectified
(Total Device 2x5A=10A)
Current TC
=125
℃
10.0
150
1.7
A
A
V
IF(AV)
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
I
FSM
Maximum Instantaneous Forward Voltage
V
F
(Per Diode/Per Leg)
@ 5.0 A
5.0
100
μA
μA
Maximum DC Reverse Current @T
At Rated DC Blocking Voltage @T
J
=25
℃
I
R
J
=125
℃
nS
pF
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
Trr
75
90
3.0
C
J
R
JC
℃
/W
Operating Junction and Storage
Temperature Range
-55 to + 150
℃
T , TSTG
J
NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
http://www.thinkisemi.com.tw/
Rev.10T
© 1995 Thinki Semiconductor Co., Ltd.