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MURF1020CT?? PDF预览

MURF1020CT??

更新时间： 2024-09-24 18:04:47
品牌 Logo 应用领域
辰达行 - MDD /
页数 文件大小 规格书
2页 638K
描述
ITO-220AB

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MURF1020CT?? 数据手册

 浏览型号MURF1020CT??的Datasheet PDF文件第2页 
MURF1010CT~MURF10100CT  
Reverse Voltage - 100 - 1000 Volts Forward Current - 10.0 Ampere  
ULTRA FAST RECTIFIER  
Features  
ITO-220AB  
The plastic package carries Underwriters  
Laboratory Flammability Classification 94V-0  
Construction utilizes void-free  
4.5± 0.2  
10.2± 0.2  
+0.2  
-0.1  
3.1  
molded plastic technique  
Low reverse leakage  
High forward surge current capability  
High temperature soldering guaranteed:  
250°C,0.25”(6.35mm) from case for 10 seconds  
PIN  
2
1
3
4.0± 0.3  
1.4± 0.1  
0.6± 0.1  
Mechanical Data  
0.6± 0.1  
2.6± 0.15  
Case : JEDEC ITO-220AB Molded plastic body  
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026  
Polarity : Polarity symbol marking on body  
Mounting Position: Any  
0.195 (4.95)  
PIN 2  
CASE  
PIN 1  
PIN 3  
Dimensions in inches and (millimeters)  
Weight  
: 0.080 ounce, 2.24 grams  
Maximum Ratings And Electrical Characteristics  
Ratings at 25°C ambient temperature unlss otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
MDD  
MDD  
MDD  
MDD  
MDD  
MURF1010CT  
MDD  
Parameter  
SYMBOLS  
UNITS  
MURF1020CT MURF1040CT MURF1060CT MURF1080CT MURF10100CT  
V
V
VRRM  
VRMS  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
400  
280  
400  
200  
140  
200  
100  
70  
600  
420  
600  
800  
560  
800  
1000  
800  
V
A
Maximum DC blocking voltage  
VDC  
I(AV)  
100  
1000  
Maximum average forward  
rectified current at TC  
per device  
per diode  
10.0  
5.0  
=110 C  
Peak forward surge current, 8.3ms single half  
sine-wave superimposed on rated load  
IFSM  
150.0  
1.28  
A
V
Maximum instantaneous forward voltage  
per diode at 5.0A  
0.95  
1.85  
75  
VF  
IR  
T
Maximum DC reverse current  
at rated DC blocking voltage  
A =25 C  
10  
500  
u
A
T
A=125 C  
Maximum reverse recovery time  
Trr  
45  
ns  
50  
RqJC  
C/W  
35.0  
Typical thermal resistance  
Operating junction temperature range  
Storage temperature range  
TJ  
C
C
-55 to +150  
-55 to +150  
TSTG  
Note:1.Reverse recovery time test condition: IF=0.5A IR=1.0A Irr=0.25A  
DN:T20817A0  
http://www.microdiode.com  
Rev:2020A1  
Page :1  
12

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