MURF1010CT~MURF10100CT
Reverse Voltage - 100 - 1000 Volts Forward Current - 10.0 Ampere
ULTRA FAST RECTIFIER
Features
ITO-220AB
The plastic package carries Underwriters
Laboratory Flammability Classification 94V-0
Construction utilizes void-free
4.5± 0.2
10.2± 0.2
+0.2
-0.1
3.1
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250°C,0.25”(6.35mm) from case for 10 seconds
PIN
2
1
3
4.0± 0.3
1.4± 0.1
0.6± 0.1
Mechanical Data
0.6± 0.1
2.6± 0.15
Case : JEDEC ITO-220AB Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position: Any
0.195 (4.95)
PIN 2
CASE
PIN 1
PIN 3
Dimensions in inches and (millimeters)
Weight
: 0.080 ounce, 2.24 grams
Maximum Ratings And Electrical Characteristics
Ratings at 25°C ambient temperature unlss otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD
MDD
MDD
MDD
MDD
MURF1010CT
MDD
Parameter
SYMBOLS
UNITS
MURF1020CT MURF1040CT MURF1060CT MURF1080CT MURF10100CT
V
V
VRRM
VRMS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
400
280
400
200
140
200
100
70
600
420
600
800
560
800
1000
800
V
A
Maximum DC blocking voltage
VDC
I(AV)
100
1000
Maximum average forward
rectified current at TC
per device
per diode
10.0
5.0
=110 C
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load
IFSM
150.0
1.28
A
V
Maximum instantaneous forward voltage
per diode at 5.0A
0.95
1.85
75
VF
IR
T
Maximum DC reverse current
at rated DC blocking voltage
A =25 C
10
500
u
A
T
A=125 C
Maximum reverse recovery time
Trr
45
ns
50
RqJC
C/W
35.0
Typical thermal resistance
Operating junction temperature range
Storage temperature range
TJ
C
C
-55 to +150
-55 to +150
TSTG
Note:1.Reverse recovery time test condition: IF=0.5A IR=1.0A Irr=0.25A
DN:T20817A0
http://www.microdiode.com
Rev:2020A1
Page :1