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MURF1010CT-BP PDF预览

MURF1010CT-BP

更新时间: 2024-11-18 20:53:43
品牌 Logo 应用领域
美微科 - MCC 局域网功效瞄准线二极管
页数 文件大小 规格书
2页 857K
描述
Rectifier Diode, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-220AB, PLASTIC, ITO-220AB, FULL PACK-3

MURF1010CT-BP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:PLASTIC, ITO-220AB, FULL PACK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
其他特性:LOW POWER LOSS应用:EFFICIENCY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3最大非重复峰值正向电流:150 A
元件数量:2相数:1
端子数量:3最大输出电流:10 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.035 µs表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MURF1010CT-BP 数据手册

 浏览型号MURF1010CT-BP的Datasheet PDF文件第2页 
MURF1005CT  
M C C  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
THRU  
MURF1040CT  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
10 Amp  
Features  
·
·
·
·
·
Low power loss, high efficiency  
Isolation Super Fast  
Recovery Rectifier  
50 to 400 Volts  
Low forward voltage, high current capability  
High surge capacity  
Super fast recovery times, high voltage  
Case : ITO-220AB Full Molded Plastic Package  
Maximum Ratings  
ITO-220AB  
·
·
Operating Junction Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
B
L
M
C
MCC  
Catalog  
Number  
Maximum  
Recurrent  
Peak Reverse  
Voltage  
50V  
Maximum Maximum  
D
RMS  
Voltage  
DC  
Blocking  
Voltage  
50V  
A
K
PIN  
2
MURF1005CT  
MURF1010CT  
MURF1015CT  
MURF1020CT  
MURF1030CT  
MURF1040CT  
35V  
70V  
1
3
100V  
150V  
200V  
300V  
100V  
E
105V  
140V  
210V  
280V  
150V  
200V  
300V  
400V  
F
G
O
I
J
400V  
N
H
H
PIN 1  
PIN 3  
PIN 2  
Electrical Characteristics @ 25°C Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
10A  
TC = 100°C  
Peak Forward Surge  
Current  
IFSM  
150A  
8.3ms, half sine  
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ  
ꢀ ꢀ ꢀ ꢀ  
Maximum  
INCHES  
ꢃꢂꢄ  
MM  
ꢁꢂꢃ  
A
B
C
D
E
ꢃꢅꢆ  
ꢃꢂꢄ  
14.80  
---  
2.55  
6.30  
---  
ꢃꢅꢆ  
15.40  
10.30  
2.85  
6.90  
4.10  
ꢄꢇꢈꢉ  
Instantaneous  
Forward Voltage  
1005CT-1020CT  
1030CT-1040CT  
.583  
---  
.100  
.248  
---  
.606  
.406  
.112  
.272  
.161  
TJ = 25°C  
IFM = 5A;  
VF  
.95V  
1.30V  
F
G
---  
.512  
.071  
.543  
---  
13.00  
1.80  
13.80  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
H
I
J
K
L
M
N
O
.100  
2.55  
---  
---  
.118  
---  
---  
.098  
.035  
.032  
.134  
.189  
.130  
.114  
---  
---  
3.00  
---  
---  
2.50  
0.90  
0.80  
3.40  
4.80  
3.30  
IR  
5uA  
TC = 25°C  
500uA TC = 100°C  
2.90  
1.40  
---  
.055  
---  
Maximum Reverse  
Recovery Time  
35ns  
50ns  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
1005CT-1020CT  
1030CT-1040CT  
Trr  
.www mccsemi.com  
Revision: 3  
2003/04/30  

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Rectifier Diode, 1 Phase, 1 Element, 10A, 200V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN