Datasheet > MURF10100CT

MURF10100CT

更新时间： 2024-11-19 01:10:51

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
2页	456K
描述
10.0 Ampere Insulated Common Cathode Ultra Fast Recovery Rectifiers

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

MURF10100CT 数据手册

MURF1080CT thru MURF10120CT

MURF1080CT/MURF10100CT/MURF10120CT

Pb Free Plating Product

10.0 Ampere Insulated Common Cathode Ultra Fast Recovery Rectifiers

ITO-220AB/TO-220F-3L

Unit : inch (mm)

Features

ꢀ

Fast switching for high efficiency

Low forward voltage drop

High current capability

.189(4.8)

.406(10.3)

.165(4.2)

.381(9.7)

.134(3.4)

.130(3.3)

.118(3.0)

.114(2.9)

Low reverse leakage current

High surge current capability

Application

Automotive Inverters and Solar Inverters

ꢀ

Plating Power Supply,SMPS and UPS

Car Audio Amplifiers and Sound Device Systems

.114(2.9)

.098(2.5)

.071(1.8)

.055(1.4)

.039(1.0)

.035(0.9)

.011(0.3)

.032(.8)

MAX

Mechanical Data

(2.55)

ꢀ

Case: Insulated ITO-220AB fully plastic isolated package

Epoxy: UL 94V-0 rate flame retardant

Terminals: Solderable per MIL-STD-202

method 208

(2.55)

Case

ꢀ

Polarity: As marked on diode body

Mounting position: Any

Weight: 2.0 gram approximately

Doubler

Tandem Polarity Tandem Polarity

Suffix "CTD" Suffix "CTS"

Series

Negative

Common Cathode Common Anode

Suffix "CT" Suffix "CTA"

Positive

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 ambient temperature unless otherwise specified.

℃

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

UNIT

SYMBOL

MURF1080CT MURF10100CT MURF10120CT

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

RRM

RMS

800

560

800

1000

700

1200

840

Maximum DC Blocking Voltage

1000

1200

Maximum Average Forward Rectified

(Total Device 2x5A=10A)

Current TC

=125

℃

10.0

150

1.7

IF(AV)

Peak Forward Surge Current, 8.3ms single

Half sine-wave superimposed on rated load

(JEDEC method)

FSM

Maximum Instantaneous Forward Voltage

(Per Diode/Per Leg)

@ 5.0 A

5.0

100

μA

Maximum DC Reverse Current @T

At Rated DC Blocking Voltage @T

=25

℃

=125

℃

Maximum Reverse Recovery Time (Note 1)

Typical junction Capacitance (Note 2)

Typical Thermal Resistance (Note 3)

Trr

3.0

℃

Operating Junction and Storage

Temperature Range

-55 to + 150

℃

T , TSTG

NOTES : (1) Reverse recovery test conditions IF= 0.5A, IR= 1.0A, Irr = 0.25A.

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.

(3) Thermal Resistance junction to case.

Page 1/2

http://www.thinkisemi.com.tw/

Rev.10T

中文翻译

下载PDF

与MURF10100CT相关器件

型号	品牌	获取价格	描述	数据表
MURF10100CT??	MDD	获取价格	ITO-220AB
MURF10100CTA	THINKISEMI	获取价格	10.0 Ampere Insulated Common Anode Ultra Fast Recovery Rectifiers
MURF1010-BP	MCC	获取价格	Rectifier Diode, 1 Phase, 1 Element, 10A, 100V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN
MURF1010CT	DIOTECH	获取价格	SUPER FAST RECOVERY SILICON RECTIFIER
MURF1010CT	EIC	获取价格	Dual Ultrafast Plastic Rectifiers
MURF1010CT	MCC	获取价格	10 Amp Isolation Super Fast Recovery Rectifier 50 to 400 Volts
MURF1010CT??	MDD	获取价格	ITO-220AB
MURF1010CT-BP	MCC	获取价格	Rectifier Diode, 1 Phase, 2 Element, 10A, 100V V(RRM), Silicon, TO-220AB, PLASTIC, ITO-220
MURF10120CT	THINKISEMI	获取价格	10.0 Ampere Insulated Common Cathode Ultra Fast Recovery Rectifiers
MURF10120CTA	THINKISEMI	获取价格	10.0 Ampere Insulated Common Anode Ultra Fast Recovery Rectifiers

与MURF10100CT相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

MURF10100CT

MURF10100CT 数据手册

与MURF10100CT相关器件

与MURF10100CT相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

MURF10100CT

MURF10100CT 数据手册

与MURF10100CT相关器件

与MURF10100CT相关文章

您还可以找

您在本页遇到什么问题？