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MURF1010 PDF预览

MURF1010

更新时间: 2024-11-18 10:41:51
品牌 Logo 应用领域
DIOTECH 二极管瞄准线功效局域网超快速恢复二极管
页数 文件大小 规格书
2页 617K
描述
SUPER FAST RECOVERY SILICON RECTIFIER

MURF1010 数据手册

 浏览型号MURF1010的Datasheet PDF文件第2页 
MURF1005 THRU MURF1060  
SUPER FAST RECOVERY SILICON RECTIFIER  
Reverse Voltage - 50 to 600 Volts  
Forward Current - 10.0 Ampere  
FEATURES  
ITO-220AC  
Glass Passivated Die Construction  
4.5± 0.2  
+0.2  
-0.1  
10.2± 0.2  
3.1  
Super-Fast Switching  
Low Forward Voltage Drop  
Low Reverse Leakage Current  
High Surge Current Capability  
Plastic Material has UL Flammability  
Classification 94V-O  
PIN  
1
2
.
.
4.0± 0.3  
1.4± 0.1  
0.6± 0.1  
MECHANICAL DATA  
2.6± 0.2  
Case: ITO-220AC, Full Molded Plastic  
Terminals: Plated Leads Solderable per  
MIL-STD-202, Method 208  
0.6± 0.1  
5.0± 0.1  
Polarity: See Diagram  
Weight: 2.24 grams (approx.)  
Mounting Position: Any  
Mounting Torque: 11.5 cm-kg (10 in-lbs) Max.  
Dimensions in millimeters  
PIN 1 +  
PIN 3 -  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
MURF  
1020  
MURF  
1005  
MURF  
1010  
MURF  
1015  
MURF  
1030  
MURF  
1040  
MURF  
1060  
Characteristic  
Symbol  
Unit  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
VRRM  
RWM  
50  
35  
100  
70  
150  
105  
200  
300  
210  
400  
600  
V
V
R
V
R(RMS)  
V
RMS Reverse Voltage  
140  
280  
420  
V
A
Average Rectified Output Current  
10.0  
O
I
@TC = 105°C  
Non-Repetitive Peak Forward Surge  
Current 8.3ms Single half sine-wave  
superimposed on rated load (JEDEC Method)  
150  
A
FSM  
I
Forward Voltage  
@IF = 10.0A  
VFM  
0.95  
1.3  
1.7  
V
Peak Reverse Current  
At Rated DC Blocking Voltage @TA = 125°C  
@TA = 25°C  
10  
500  
RM  
I
µA  
rr  
Reverse Recovery Time (Note 1)  
t
35  
70  
50  
50  
nS  
pF  
°C  
j
Typical Junction Capacitance (Note 2)  
Operating and Storage Temperature Range  
C
Tj, TSTG  
-65 to +150  
Note: 1. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.  
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.  

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