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MURF10020R PDF预览

MURF10020R

更新时间: 2024-01-05 06:22:41
品牌 Logo 应用领域
GENESIC 超快速恢复二极管局域网
页数 文件大小 规格书
3页 342K
描述
Silicon Super Fast Recovery Diode

MURF10020R 技术参数

生命周期:Contact ManufacturerReach Compliance Code:compliant
风险等级:5.73应用:SUPER FAST RECOVERY
外壳连接:ANODE配置:COMMON ANODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:TO-244
JESD-30 代码:R-PUFM-X2最大非重复峰值正向电流:1500 A
元件数量:2相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:50 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT最大重复峰值反向电压:200 V
最大反向电流:25 µA最大反向恢复时间:0.075 µs
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPERBase Number Matches:1

MURF10020R 数据手册

 浏览型号MURF10020R的Datasheet PDF文件第2页浏览型号MURF10020R的Datasheet PDF文件第3页 
MURF10005 thru MURF10020R  
VRRM = 50 V - 200 V  
IF(AV) = 100 A  
Silicon Super Fast  
Recovery Diode  
Features  
• High Surge Capability  
• Types from 50 V to 200 V VRRM  
• Not ESD Sensitive  
TO-244 Package  
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)  
Conditions  
MURF10020(R)  
Parameter  
Symbol  
MURF10005(R)  
MURF10010(R)  
Unit  
VRRM  
200  
Repetitive peak reverse voltage  
50  
100  
V
VRMS  
VDC  
Tj  
140  
RMS reverse voltage  
DC blocking voltage  
Operating temperature  
Storage temperature  
35  
70  
V
V
200  
50  
100  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
-55 to 150  
°C  
°C  
Tstg  
Electrical characteristics, at Tj = 25 °C, unless otherwise specified  
Conditions  
TC = 140 °C  
MURF10020(R)  
Parameter  
Symbol  
IF(AV)  
IFSM  
MURF10005(R)  
MURF10010(R)  
Unit  
A
Average forward current (per  
pkg)  
100  
100  
100  
Peak forward surge current (per  
leg)  
tp = 8.3 ms, half sine  
1500  
1500  
1500  
A
Maximum instantaneous  
forward voltage (per leg)  
VF  
I
FM = 50 A, Tj = 25 °C  
Tj = 25 °C  
1.0  
V
1.0  
1.0  
Maximum reverse current at  
rated DC blocking voltage (per  
leg)  
25  
3
25  
3
25  
3
μA  
IR  
Tj = 125 °C  
mA  
IF=0.5 A, IR=1.0 A,  
Maximum reverse recovery time  
(per leg)  
Trr  
75  
75  
75  
nS  
I
RR= 0.25 A  
Thermal characteristics  
Maximum thermal resistance,  
junction - case (per leg)  
RΘJC  
1.00  
1.00  
1.00  
°C/W  
1
www.genesicsemi.com/silicon-products/super-fast-recovery-rectifiers/  

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