Datasheet > MUR810

MUR810

更新时间： 2024-11-20 12:56:55

品牌	Logo	应用领域
森美特 - SUNMATE		二极管局域网超快软恢复二极管快速软恢复二极管
页数	文件大小	规格书
2页	327K
描述
8A plug-in fast recovery diode 100V TO-220 series

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获取价格

数据手册

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MUR810 数据手册

MUR805 - MUR860

ULTRA FAST RECTIFIER DIODES

VOLTAGE RANGE: 50 - 600V

CURRENT: 8.0A

Features

Low cost

Diffused junction

TO - 220

Glass passivated junction

Low forward voltage drop

High current capability

Easily cleaned with Alcohol,Isopropanol

and similar solvents

Mechanical Data

Case:TO-220

Terminals: solderable per

MIL- STD-202,Method 208

Polarity: Color band denotes cathode

! Weight: 0.064 ounces,1.81 gram

Mounting position: Any

T_A= 25ꢀC unless otherwise specified

Maximum Ratings and Electrical Characteristics

For capacitive load, derate current by 20%.

Single phase, half wave, 60Hz, resistive or inductive load.

MUR

805

MUR

810

MUR

815

MUR

820

MUR

840

MUR

860

Symbol

Characteristic

Unit

V_RRM

V_RMS

V_DC

Maximum recurrent peak reverse voltage

Maximum RMS voltage

100

150

105

150

200

140

200

400

280

400

600

420

600

Maximum DC blocking voltage

Maximum average forward rectified current

total device (rated V_R),T_C=150℃

Peak forward surge current

100

I_(AV)

8.0

I_FSM

8.3ms single half-sine-wave

100

superimposed on rated load

Maximum instantaneous

forward voltage (Note1)

@I_F=8.0A,T_C=25℃

I_F=8.0A,T_C=150℃

0.975

1.30

1.00

1.50

1.20

V_F

I_R

0.895

5.0

250

Maximum reverse current

@T_j=25℃

500

µA

at rated DC blocking voltage

T_j=150℃

Maximum reverse recovery time (Note2)

(Note3)

t_rr

Typical thermal resistance junction to case

Operating junction temperature range

Storage temperature range

R_θjC

T_j

3.0

2.0

℃/W

℃

- 65 ---- + 175

T_STG

℃

NOTE:1.Pulse test:pulse width=300µs,duty cycle≤2.0%

2. Measured with I_F=0.5A, I_R=1A, I_rr=0.25 A.

3. Measured with I_F=1.0A,di/dt=50A/µs.

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