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MUR8100E/D PDF预览

MUR8100E/D

更新时间: 2024-02-09 12:40:59
品牌 Logo 应用领域
其他 - ETC 开关
页数 文件大小 规格书
8页 99K
描述
SWITCHMODE? Power Rectifiers

MUR8100E/D 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.72
二极管类型:RECTIFIER DIODE峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MUR8100E/D 数据手册

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MUR8100E, MUR880E  
MUR8100E is a Preferred Device  
SWITCHMODE  
Power Rectifiers  
Ultrafast “E’’ Series with High Reverse  
Energy Capability  
http://onsemi.com  
. . . designed for use in switching power supplies, inverters and as  
free wheeling diodes, these state–of–the–art devices have the  
following features:  
ULTRAFAST RECTIFIERS  
8.0 AMPERES  
20 mjoules Avalanche Energy Guaranteed  
Excellent Protection Against Voltage Transients in Switching  
Inductive Load Circuits  
800–1000 VOLTS  
Ultrafast 75 Nanosecond Recovery Time  
1
175°C Operating Junction Temperature  
Popular TO–220 Package  
4
3
Epoxy Meets UL94, V @ 1/8″  
O
Low Forward Voltage  
4
Low Leakage Current  
High Temperature Glass Passivated Junction  
Reverse Voltage to 1000 Volts  
Mechanical Characteristics:  
Case: Epoxy, Molded  
Weight: 1.9 grams (approximately)  
Finish: All External Surfaces Corrosion Resistant and Terminal  
Leads are Readily Solderable  
1
3
TO–220AC  
CASE 221B  
PLASTIC  
Lead Temperature for Soldering Purposes:  
260°C Max. for 10 Seconds  
Shipped 50 units per plastic tube  
Marking: U880E, U8100E  
MARKING DIAGRAM  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
Unit  
U8x0E  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
V
RRM  
RWM  
V
V
DC Blocking Voltage  
MUR880E  
MUR8100E  
V
R
800  
1000  
U8x0E = Device Code  
Average Rectified Forward Current  
(Rated V , T = 150°C)  
I
8.0  
A
A
A
F(AV)  
x
= 8 or 10  
R
C
Total Device  
Peak Repetitive Forward Current  
I
16  
ORDERING INFORMATION  
FM  
(Rated V , Square Wave,  
R
Device  
Package  
TO–220  
TO–220  
Shipping  
20 kHz, T = 150°C)  
C
Non–Repetitive Peak Surge Current  
(Surge Applied at Rated Load  
Conditions Halfwave, Single  
Phase, 60 Hz)  
I
100  
MUR8100E  
MUR880E  
50 Units/Rail  
50 Units/Rail  
FSM  
Operating Junction and Storage  
Temperature Range  
T , T  
–65 to +175  
°C  
Preferred devices are recommended choices for future use  
and best overall value.  
J
stg  
Semiconductor Components Industries, LLC, 2000  
1
Publication Order Number:  
October, 2000 – Rev. 1  
MUR8100E/D  

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