5秒后页面跳转
MUR810CT PDF预览

MUR810CT

更新时间: 2024-01-15 03:34:41
品牌 Logo 应用领域
固锝 - GOOD-ARK /
页数 文件大小 规格书
2页 167K
描述
Glass Passivated Super Fast Rectifiers

MUR810CT 技术参数

生命周期:Obsolete包装说明:R-PSFM-T2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.1
应用:ULTRA FAST RECOVERY POWER外壳连接:ANODE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.975 V
JEDEC-95代码:TO-220ACJESD-30 代码:R-PSFM-T2
最大非重复峰值正向电流:100 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向电流:5 µA最大反向恢复时间:0.035 µs
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLEBase Number Matches:1

MUR810CT 数据手册

 浏览型号MUR810CT的Datasheet PDF文件第2页 
MUR805CT thru MUR860CT  
Glass Passivated Super Fast Rectifiers  
Reverse Voltage 50 to 600 Volts Forward Current 8.0 Amperes  
Features  
‹ Superfast switching time for hight efficiency  
‹ Low reverse leakage current  
‹ High surge capacity  
TO-220AB  
Mechanical Data  
‹ Case: TO-220AB full molded plastic package  
‹ Terminals: Lead solderable per MIL-STD-202, Method 208  
‹ Polarity: As marked  
‹ Standard packaging: Any  
‹ Weight: 0.08 ounces, 2.24 grams  
Maximum Ratings and Electrical Characteristics  
Ratings at 25oC ambient temperature unless otherwise specified.  
Parameter  
Symbol  
MUR805CT  
MUR810CT  
MUR820CT  
MUR840CT  
MUR860CT  
Unit  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
35  
50  
100  
70  
200  
140  
200  
8.0  
400  
280  
400  
600  
420  
600  
Volts  
Volts  
Volts  
Amps  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current at TC=120oC  
IF(AV)  
Peak forward surge current 8.3ms single half sine-wave  
superimposed on rated load (JEDEC Method)  
IFSM  
VF  
IR  
100.0  
Amps  
Volts  
uA  
Maximum instantaneous forward voltage at 4.0A per  
element  
2.2  
2.8  
Maximum DC reverse current  
at rated DC blocking voltage  
@TJ=25oC  
10.0  
800  
@TJ=100oC  
Maximum reverse recovery time at  
nS  
trr  
30  
50  
IF=0.5A, IR=1.0A, I =0.25A  
rr  
Operating junction and storage temperature range  
TJ, TSTG  
-55 to +150  
oC  
Notes: 1. Pulse test: Pulse width 300 usec, Duty cycle 2%  
263  

与MUR810CT相关器件

型号 品牌 描述 获取价格 数据表
MUR810F YANGJIE Ultra-Fast Recovery Rectifier Diodes

获取价格

MUR810F_17 YANGJIE Ultra-Fast Recovery Rectifier Diodes

获取价格

MUR810F-BP-HF MCC Rectifier Diode, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN

获取价格

MUR810G ONSEMI ULTRAFAST RECTIFIERS 8.0 AMPERES, 50−600 VOLTS

获取价格

MUR8120 THINKISEMI 10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode

获取价格

MUR8120 MCC

获取价格