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MUR8120

更新时间: 2024-02-14 18:16:19
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
3页 620K
描述
10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode

MUR8120 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ITO-220AC, 2 PINReach Compliance Code:not_compliant
风险等级:5.7应用:EFFICIENCY
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):2.3 VJEDEC-95代码:TO-220AC
JESD-30 代码:R-PSFM-T2湿度敏感等级:1
最大非重复峰值正向电流:110 A元件数量:1
相数:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED最大重复峰值反向电压:1200 V
最大反向电流:10 µA最大反向恢复时间:0.065 µs
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

MUR8120 数据手册

 浏览型号MUR8120的Datasheet PDF文件第2页浏览型号MUR8120的Datasheet PDF文件第3页 
MUR8120  
®
MUR8120  
Pb Free Plating Product  
10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode  
TO-220AC/TO-220C-2P  
APPLICATION  
Cathode(Bottom Side Metal Heatsink)  
· Freewheeling, Snubber, Clamp  
· Inversion Welder  
· PFC  
· Plating Power Supply  
· Ultrasonic Cleaner and Welder  
· Converter & Chopper  
· UPS  
Anode  
PRODUCT FEATURE  
Cathode  
· Ultrafast Recovery Time  
Internal Configuration  
· Soft Recovery Characteristics  
· Low Recovery Loss  
Base Backside  
· Low Forward Voltage  
· High Surge Current Capability  
· Low Leakage Current  
GENERAL DESCRIPTION  
MUR8120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.  
ABSOLUTE MAXIMUM RATINGS  
TC=25°C unless otherwise specified  
Symbol  
Parameter  
Maximum D.C. Reverse Voltage  
Maximum Repetitive Reverse Voltage  
Average Forward Current  
RMS Forward Current  
Test Conditions  
Values  
1200  
1200  
10  
Unit  
V
VR  
VRRM  
IF(AV)  
IF(RMS)  
IFSM  
V
TC=110°C  
A
TC=110°C  
15  
A
A
TJ=45°C, t=10ms, 50Hz, Sine  
100  
Non-Repetitive Surge Forward Current  
Power Dissipation  
PD  
70  
-40 to +150  
-40 to +150  
1.1  
W
°C  
TJ  
Junction Temperature  
TSTG  
Torque  
RθJC  
Weight  
Storage Temperature Range  
Module-to-Sink  
°C  
RecommendedM3)  
N·m  
°C /W  
g
Thermal Resistance  
Junction-to-Case  
1.8  
2.2  
ELECTRICAL CHARACTERISTICS  
TC=25°C unless otherwise specified  
Symbol  
Parameter  
Test Conditions  
Min. Typ. Max.  
Unit  
100  
500  
µA  
VR=1200V  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
--  
IRM  
Reverse Leakage Current  
µA  
VR=1200V, TJ=125°C  
IF=10A  
2.4  
1.85  
22  
--  
--  
--  
--  
--  
--  
--  
V
V
VF  
Forward Voltage  
IF=10A, TJ=125°C  
trr  
Reverse Recovery Time  
IF=1A, VR=30V, diF/dt=-200A/μs  
VR=600V, IF=10A  
ns  
ns  
A
trr  
Reverse Recovery Time  
44  
diF/dt=-200A/μs, TJ=25°C  
IRRM  
trr  
Max. Reverse Recovery Current  
Reverse Recovery Time  
3.5  
220  
6.5  
VR=600V, IF=10A  
ns  
A
diF/dt=-200A/μs, TJ=125°C  
IRRM  
Max. Reverse Recovery Current  
Rev.05  
© 2006 Thinki Semiconductor Co.,Ltd.  
Page 1/3  
http://www.thinkisemi.com/  

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