Datasheet > MUR8120

MUR8120

更新时间： 2024-11-20 12:56:43

品牌	Logo	应用领域
THINKISEMI		/
页数	文件大小	规格书
3页	620K
描述
10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode

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MUR8120 数据手册

MUR8120

Pb Free Plating Product

10 Ampere,1200 Volt SwitchMode Single Fast Recovery Epitaxial Diode

TO-220AC/TO-220C-2P

APPLICATION

Cathode(Bottom Side Metal Heatsink)

· Freewheeling, Snubber, Clamp

· Inversion Welder

· PFC

· Plating Power Supply

· Ultrasonic Cleaner and Welder

· Converter & Chopper

· UPS

Anode

PRODUCT FEATURE

Cathode

· Ultrafast Recovery Time

Internal Configuration

· Soft Recovery Characteristics

· Low Recovery Loss

Base Backside

· Low Forward Voltage

· High Surge Current Capability

· Low Leakage Current

GENERAL DESCRIPTION

MUR8120 using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.

ABSOLUTE MAXIMUM RATINGS

T_C=25°C unless otherwise specified

Symbol

Parameter

Maximum D.C. Reverse Voltage

Maximum Repetitive Reverse Voltage

Average Forward Current

RMS Forward Current

Test Conditions

Values

1200

Unit

V_R

V_RRM

I_F(AV)

I_F(RMS)

I_FSM

T_C=110°C

T_J=45°C, t=10ms, 50Hz, Sine

100

Non-Repetitive Surge Forward Current

Power Dissipation

P_D

-40 to +150

1.1

°C

T_J

Junction Temperature

T_STG

Torque

R_θJC

Weight

Storage Temperature Range

Module-to-Sink

°C

Recommended（M3）

N·m

°C /W

Thermal Resistance

Junction-to-Case

1.8

2.2

ELECTRICAL CHARACTERISTICS

T_C=25°C unless otherwise specified

Symbol

Parameter

Test Conditions

Min. Typ. Max.

Unit

100

500

µA

V_R=1200V

I_RM

Reverse Leakage Current

µA

V_R=1200V, T_J=125°C

I_F=10A

2.4

1.85

V_F

Forward Voltage

I_F=10A, T_J=125°C

t_rr

Reverse Recovery Time

I_F=1A, V_R=30V, di_F/dt=-200A/μs

V_R=600V, I_F=10A

t_rr

Reverse Recovery Time

di_F/dt=-200A/μs, T_J=25°C

I_RRM

t_rr

Max. Reverse Recovery Current

Reverse Recovery Time

3.5

220

6.5

V_R=600V, I_F=10A

di_F/dt=-200A/μs, T_J=125°C

I_RRM

Max. Reverse Recovery Current

Rev.05

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