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MUR820

更新时间: 2024-02-29 20:15:00
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical 二极管功效局域网
页数 文件大小 规格书
2页 192K
描述
ULTRA FAST RECTIFIER

MUR820 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:unknown风险等级:5.64
二极管类型:RECTIFIER DIODE峰值回流温度(摄氏度):NOT SPECIFIED
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

MUR820 数据手册

 浏览型号MUR820的Datasheet PDF文件第2页 
BLGALAXY ELECTRICAL  
MUR805 - - - MUR860  
VOLTAGE RANGE: 50 --- 600V  
CURRENT: 8.0A  
ULTRA FAST RECTIFIER  
FEATURES  
Low cost  
TO - 220AC  
Diffused junction  
Glass passivated junction  
Low forward voltage drop  
High current capability  
Easily cleaned with Alcohol,Isopropanol and similar solvents  
The plastic material carries U/L recognition 94V-0  
MECHANICAL DATA  
Case:JEDEC TO-220AC  
Terminals: solderable per  
MIL- STD-202,Method 208  
Polarity: Color band denotes cathode  
Weight: 0.064 ounces,1.81 gram  
Mounting position: Any  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25ambient temperature unless otherwise specified.  
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.  
MUR  
805  
MUR  
810  
MUR  
815  
MUR  
820  
MUR  
840  
MUR  
860  
UNITS  
Device marking code  
U805  
U810  
U815  
U820  
U840  
U860  
VRRM  
VRMS  
VDC  
50  
35  
50  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
100  
70  
150  
105  
150  
200  
140  
200  
400  
280  
400  
600  
420  
600  
V
V
V
Maximum DC blocking voltage  
Maximum average forward rectified current  
total device (rated VR),TC=150  
Peak forward surge current  
100  
I(AV)  
8.0  
A
IFSM  
8.3ms single half-sine-wave  
100  
A
superimposed on rated load  
Maximum instantaneous  
forward voltage (Note1)  
@IF=8.0A,TC=25℃  
0.975  
1.30  
1.00  
1.50  
1.20  
VF  
IR  
V
0.895  
5.0  
250  
25  
IF=8.0A,TC=150℃  
@Tj=25℃  
Maximum reverse current  
10  
500  
50  
µA  
at rated DC blocking voltage  
Tj=150  
Maximum reverse recovery time (Note2)  
(Note3)  
trr  
ns  
35  
60  
Typical thermal resistance junction to case  
Operating junction temperature range  
Storage temperature range  
RθjC  
Tj  
3.0  
2.0  
/W  
- 65 ---- + 175  
- 65 ---- + 175  
TSTG  
www.galaxycn.com  
NOTE:1.Pulse test:pulse width=300µs,duty cycle2.0%  
2. Measured with IF=0.5A, IR=1A, Irr=0.25 A.  
3. Measured with IF=1.0A,di/dt=50A/µs.  
BLGALAXY ELECTRICAL  
Document Number 0264045  
1.  

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