RoHS
MUR810F THRU MUR860F
COMPLIANT
超快恢复整流二极管 Ultra-Fast Recovery Rectifier Diodes
■特征 Features
■外形尺寸和印记 Outline Dimensions and Mark
●
●
●
●
Io
8.0A
VRRM
100V~600V
ITO-220AC
玻璃钝化芯片 Glass passivated chip
耐正向浪涌电流能力高
.201(5.1)
MAX
.150(3.8)
.421(10.7)
MAX
.102(2.6)
.140(3.56)
MAX
DIA
High surge forward current capability
.128(3.25)
.085(2.15)
.626(15.9)
.567(14.4)
.177(4.5)
MAX
PIN1
2
.126(3.2)
.08(2.1)
■用途 Applications
● 快速整流用
.071(1.8)
MAX
.035(0.9)
MAX
.559(14.2)
.504(12.7)
.031(0.80)
MAX
High speed switching
.232(5.9)
.142(3.6)
PIN1
CASE
PIN2
■
极限值(绝对最大额定值)
Limiting Values(Absolute Maximum Rating)
Dimensions in inches and (millimeters)
MUR
810F 815F 820F 840F 860F
参数名称
Item
符号 单位
Symbol Unit
测试条件
Conditions
反向重复峰值电压
Repetitive Peak Reverse Voltage
VRRM
V
A
100
150
200
400 600
正弦半波60Hz,电阻负载,Tc(Fig.1)
60HZ Half-sine wave, Resistance load,
Tc(Fig.1)
平均整流输出电流
Average Rectified Output Current
Io
8
60HZ正弦波,一个周期,Ta=25℃
60HZ sine wave, 1 cycle, Ta=25℃
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward Current
IFSM
I2t
A
125
65
正向浪涌电流的平方对电流浪涌持续
时间的积分值
Current Squared Time
A2s
1ms≤t<8.3ms T =25℃
j
贮存温度
Storage Temperature
Tstg
Tj
-55 ~ +150
-55 ~ +150
℃
℃
结温
Junction Temperature
■电特性 (Ta=25℃ 除非另有规定)
Electrical Characteristics(Ta=25℃ Unless otherwise specified)
MUR
参数名称
Item
符号
Symbol
单位
Unit
测试条件
Test Condition
810F 815F 820F 840F 860F
正向峰值电压
Peak Forward Voltage
VFM
V
I FM =8.0A
0.95
1.25
1.7
反向峰值电流
Peak Reverse Current
T =25℃
IRRM1
IRRM2
10
a
VRM =VRRM
μA
T =125℃
a
500
反向恢复时间
Reverse Recovery Time
IF=0.5A IRM=1A
IRR=0.25A
Trr
ns
35
50
热阻
结和壳之间
Between junction and case
R
θJ-C
2.0
℃/W
Thermal Resistance
扬州扬杰电子科技股份有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd.
S-B112
Rev.1.2, 29-Nov-14
www.21yangjie.com