是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
Reach Compliance Code: | unknown | 风险等级: | 5.91 |
其他特性: | LOGIC LEVEL COMPATIBLE, LEADFORM OPTIONS ARE AVAILABLE | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 80 V |
最大漏极电流 (ID): | 15 A | 最大漏源导通电阻: | 0.135 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 功耗环境最大值: | 75 W |
最大脉冲漏极电流 (IDM): | 45 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | Tin/Lead (Sn/Pb) |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MTP15N15 | MOTOROLA |
获取价格 |
POWER FIELD EFFECT TRANSISTOR | |
MTP15N1516 | MOTOROLA |
获取价格 |
15A, 150V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP15N15A | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 150V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
MTP15N15A16A | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 150V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
MTP15N15AF | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 150V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
MTP15N15AJ | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 150V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
MTP15N15C | MOTOROLA |
获取价格 |
15A, 150V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP15N15D1 | MOTOROLA |
获取价格 |
15A, 150V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | |
MTP15N15L | MOTOROLA |
获取价格 |
Power Field-Effect Transistor, 15A I(D), 150V, 0.25ohm, 1-Element, N-Channel, Silicon, Met | |
MTP15N15N | MOTOROLA |
获取价格 |
15A, 150V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |