Datasheet > MTP162M3

MTP162M3

更新时间： 2024-11-16 10:42:35

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		/
页数	文件大小	规格书
7页	541K
描述
30V P-CHANNEL Enhancement Mode MOSFET

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数据手册

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MTP162M3 数据手册

Spec. No. : C420M3

Issued Date : 2007.10.08

Revised Date :

CYStech Electronics Corp.

Page No. : 1/7

30V P-CHANNEL Enhancement Mode MOSFET

MTP162M3

Features

• Single Drive Requirement

• Low On-resistance, RDS(ON)=80mΩ@VGS=-4.5V, ID=-3.0A

• Ultra High Speed Switching

• Pb-free package

Symbol

Outline

MTP162M3

SOT-89

G D S

G：Gate

S：Source

D：Drain

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Drain-Source Voltage

Gate-Source Voltage

VDS

VGS

IDM

-30

±12

-3.2

-2.6

-10 *1, 3

0.01

90 *2

W/°C

°C/W

Continuous Drain Current @ TA=25°C

Continuous Drain Current @ TA=70°C

Pulsed Drain Current

Total Power Dissipation (TA=25℃)

Linear Derating Factor

Rth,ja

Thermal Resistance, Junction to Ambient

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

Note : *1 Pulse width limited by maximum junction temperature

*2. Surface mounted on 1 in² copper pad of FR-4 board; 270 °C/W when mounted on min. copper pad

*3. Pulse width≤300μs, duty cycle≤2%

MTP162M3

CYStek Product Specification

12 3 4 5 6 7

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