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MTP1N60E

更新时间： 2024-09-22 22:45:47
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 235K
描述
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM

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MTP1N60E 技术参数

生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknown风险等级：5.31
Is Samacsys：N雪崩能效等级（Eas）：45 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：600 V最大漏极电流 (Abs) (ID)：1 A
最大漏极电流 (ID)：1 A最大漏源导通电阻：8 Ω
FET 技术：METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss)：10 pF
JEDEC-95代码：TO-220ABJESD-30 代码：R-PSFM-T3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL功耗环境最大值：50 W
最大功率耗散 (Abs)：50 W最大脉冲漏极电流 (IDM)：3 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：NO端子面层：Tin/Lead (Sn/Pb)
端子形式：THROUGH-HOLE端子位置：SINGLE
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：70 ns最大开启时间（吨）：31.2 ns
Base Number Matches：1

MTP1N60E 数据手册

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Order this document  
by MTP1N60E/D  
SEMICONDUCTOR TECHNICAL DATA  
Motorola Preferred Device  
N–Channel Enhancement–Mode Silicon Gate  
TMOS POWER FET  
1.0 AMPERES  
600 VOLTS  
This high voltage MOSFET uses an advanced termination  
scheme to provide enhanced voltage–blocking capability without  
degrading performance over time. In addition, this advanced TMOS  
E–FET is designed to withstand high energy in the avalanche and  
commutation modes. The new energy efficient design also offers a  
drain–to–source diode with a fast recovery time. Designed for high  
voltage, high speed switching applications in power supplies,  
converters and PWM motor controls, these devices are particularly  
well suited for bridge circuits where diode speed and commutating  
safe operating areas are critical and offer additional safety margin  
against unexpected voltage transients.  
R
= 8.0 OHM  
DS(on)  
•
•
•
Robust High Voltage Termination  
Avalanche Energy Specified  
Source–to–Drain Diode Recovery Time Comparable to a Discrete  
Fast Recovery Diode  
D
•
•
Diode is Characterized for Use in Bridge Circuits  
I
and V Specified at Elevated Temperature  
DSS  
DS(on)  
G
CASE 221A–06, Style 5  
TO–220AB  
S
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
Rating  
Symbol  
Value  
600  
Unit  
Vdc  
Vdc  
Drain–Source Voltage  
V
DSS  
Drain–Gate Voltage (R  
= 1.0 MΩ)  
Gate–Source Voltage — Continuous  
V
DGR  
600  
GS  
V
± 20  
± 40  
Vdc  
Vpk  
GS  
Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)  
V
GSM  
p
Drain Current — Continuous  
Drain Current — Continuous @ 100°C  
Drain Current — Single Pulse (t ≤ 10 µs)  
I
I
1.0  
0.8  
3.0  
Adc  
Apk  
D
D
I
p
DM  
Total Power Dissipation  
Derate above 25°C  
P
D
50  
0.4  
Watts  
W/°C  
Operating and Storage Temperature Range  
T , T  
stg  
–55 to 150  
45  
°C  
J
Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C  
E
AS  
mJ  
J
(V  
DD  
= 100 Vdc, V = 10 Vdc, I = 3.0 Apk, L = 10 mH, R = 25 Ω)  
GS L G  
Thermal Resistance — Junction to Case  
Thermal Resistance — Junction to Ambient  
R
R
2.50  
62.5  
°C/W  
°C  
θJC  
θJA  
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds  
T
260  
L
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit  
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.  
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.  
Preferred devices are Motorola recommended choices for future use and best overall value.  
REV 1  
Motorola, Inc. 1995  
12345678

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