MTP1N60E

更新时间： 2024-11-15 22:45:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
8页	235K
描述
TMOS POWER FET 1.0 AMPERES 600 VOLTS RDS(on) = 8.0 OHM

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MTP1N60E 技术参数

生命周期：	Transferred	包装说明：	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：	unknown	风险等级：	5.31
Is Samacsys：	N	雪崩能效等级（Eas）：	45 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	600 V	最大漏极电流 (Abs) (ID)：	1 A
最大漏极电流 (ID)：	1 A	最大漏源导通电阻：	8 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最大反馈电容 (Crss)：	10 pF
JEDEC-95代码：	TO-220AB	JESD-30 代码：	R-PSFM-T3
JESD-609代码：	e0	元件数量：	1
端子数量：	3	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	功耗环境最大值：	50 W
最大功率耗散 (Abs)：	50 W	最大脉冲漏极电流 (IDM)：	3 A
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	NO	端子面层：	Tin/Lead (Sn/Pb)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
最大关闭时间（toff）：	70 ns	最大开启时间（吨）：	31.2 ns
Base Number Matches：	1

MTP1N60E 数据手册

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by MTP1N60E/D

SEMICONDUCTOR TECHNICAL DATA

Motorola Preferred Device

N–Channel Enhancement–Mode Silicon Gate

TMOS POWER FET

1.0 AMPERES

600 VOLTS

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage–blocking capability without

degrading performance over time. In addition, this advanced TMOS

E–FET is designed to withstand high energy in the avalanche and

commutation modes. The new energy efficient design also offers a

drain–to–source diode with a fast recovery time. Designed for high

voltage, high speed switching applications in power supplies,

converters and PWM motor controls, these devices are particularly

well suited for bridge circuits where diode speed and commutating

safe operating areas are critical and offer additional safety margin

against unexpected voltage transients.

= 8.0 OHM

DS(on)

•

Robust High Voltage Termination

Avalanche Energy Specified

Source–to–Drain Diode Recovery Time Comparable to a Discrete

Fast Recovery Diode

•

Diode is Characterized for Use in Bridge Circuits

and V Specified at Elevated Temperature

DSS

DS(on)

CASE 221A–06, Style 5

TO–220AB

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

600

Unit

Vdc

Drain–Source Voltage

DSS

Drain–Gate Voltage (R

= 1.0 MΩ)

Gate–Source Voltage — Continuous

DGR

600

± 20

± 40

Vdc

Vpk

Gate–Source Voltage — Non–Repetitive (t ≤ 10 ms)

GSM

Drain Current — Continuous

Drain Current — Continuous @ 100°C

Drain Current — Single Pulse (t ≤ 10 µs)

1.0

0.8

3.0

Adc

Apk

Total Power Dissipation

Derate above 25°C

0.4

Watts

W/°C

Operating and Storage Temperature Range

T , T

stg

–55 to 150

°C

Single Pulse Drain–to–Source Avalanche Energy — Starting T = 25°C

= 100 Vdc, V = 10 Vdc, I = 3.0 Apk, L = 10 mH, R = 25 Ω)

GS L G

Thermal Resistance — Junction to Case

Thermal Resistance — Junction to Ambient

2.50

62.5

°C/W

°C

θJC

θJA

Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds

260

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 1

Motorola TMOS Power MOSFET Transistor Device Data

Motorola, Inc. 1995

12 3 4 5 6 7 8

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与MTP1N60E相关器件

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MTP1N80E	MOTOROLA	获取价格	TMOS POWER FET 1.0 AMPERES 800 VOLTS RDS(on) = 12 OHMS
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MTP20012	NELLSEMI	获取价格	Three-Phase Bridge Rectifier
MTP20012D	NELLSEMI	获取价格	Three-Phase Bridge Rectifier

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