Datasheet > MT8LSDT3264A

MT8LSDT3264A

更新时间： 2024-11-20 22:24:55

品牌	Logo	应用领域
镁光 - MICRON		动态存储器
页数	文件大小	规格书
24页	609K
描述
SYNCHRONOUS DRAM MODULE

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中文翻译

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数据手册

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MT8LSDT3264A 数据手册

256MB / 512MB (x64)

168-PIN SDRAM DIMMs

MT8LSDT3264A(I) - 256MB

MT16LSDT6464A(I) - 512MB

For the latest data sheet, please refer to the Micron Web

site: www.micron.com/moduleds

SYNCHRONOUS

DRAM MODULE

Fe a t u re s

Fig u re 1: 168-Pin DIMM (MO–161)

• PC100- and PC133-compliant

• JEDEC-standard 168-pin, dual in-line memory

module (DIMM)

Standard

• Unbuffered

• 256MB (32 Meg x 64), 512MB (64 Meg x 64)

• Single +3.3V ±0.3V power supply

• Fully synchronous; all signals registered on positive

edge of system clock

• Internal pipelined operation; colum n address can

be changed every clock cycle

Low Profile

•

Internal SDRAM banks for hiding row access/ precharge

• Program m able burst lengths: 1, 2, 4, 8, or full page

• Auto Precharge, including Concurrent Auto

Precharge, and Auto Refresh Modes

• 64ms, 8,192 cycle Auto Refresh cycle

• Self Refresh Mode

• LVTTL-com patible inputs and outputs

• Serial Presence-Detect (SPD)

Ta b le 2:

Tim in g p a ra m e t e rs

OPTIONS

• Package

MARKING

PC100

CL - RCD - RP

PC133

MODULE

MARKINGS

CL - RCD - RP

Unbuffered

-13E

-133

-10E

2 - 2 - 2

3 - 3 - 3

168-pin DIMM (gold)

• Operating Tem perature Range

Commercial (0°C to +70°C)

Industrial (-40°C to +85°C)¹

• Memory Clock/ CAS Latency

(133 MHz)/ CL = 2

None

-13E

-133

-10E

Ta b le 3:

Pa rt Nu m b e rs

(133 MHz)/ CL = 3

(100 MHz)/ CL = 2

SYSTEM

PARTNUMBER¹

CONFIGURATION BUS SPEED

NOTE:

MT8LSDT3264AG-13E_

MT8LSDT3264AG(I)-133_

MT8LSDT3264AG-10E_

MT16LSDT6464AG-13E_

MT16LSDT6464AG(I)-133_

MT16LSDT6464AG-10E_

NOTE:

32 Meg x 64

64 Meg x 64

133 MHz

100 MHz

133 MHz

100 MHz

1. Consult Micron for availability; Industrial Tempera-

ture Option available in -133 speed only.

Ta b le 1:

Ad d re ss Ta b le

256MB

MODULE

512MB

MODULE

Refresh Count

Device Banks

Device Configuration

Row Addressing

Column Addressing

Module Banks

4 (BA0, BA1)

32 Meg x 8

8K (A0–A12)

1K (A0–A9)

2 (S0,S2; S1,S3)

1. The designators for component and PCB revision

are the last two characters of each part number.

Consult factory for current revision codes. Example:

MT8LSDT3264AG-133B1.

32 Meg x 8

8K (A0–A12)

1K (A0–A9)

1 (S0,S2)

32,64 Meg x 64 SDRAM DIMMs

SD8_16C32_64x64AG_C.fm - Rev. C 11/02

Micron Technology, Inc., reserves the right to change products or specifications without notice.

12 3 4 5 6 7...24

中文翻译

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与MT8LSDT3264A相关器件

型号	品牌	获取价格	描述	数据表
MT8LSDT3264AG-10E	MICRON	获取价格	SYNCHRONOUS DRAM MODULE
MT8LSDT3264AG-133	MICRON	获取价格	SYNCHRONOUS DRAM MODULE
MT8LSDT3264AG-13E	MICRON	获取价格	SYNCHRONOUS DRAM MODULE
MT8LSDT3264AGI-133	MICRON	获取价格	SYNCHRONOUS DRAM MODULE
MT8LSDT3264AI	MICRON	获取价格	SYNCHRONOUS DRAM MODULE
MT8LSDT432UG-10	ETC	获取价格	x32 SDRAM Module
MT8LSDT864	MICRON	获取价格	SMALL-OUTLINE SDRAM MODULE
MT8LSDT864A	MICRON	获取价格	8,16 MEG x 64 SDRAM DIMMs
MT8LSDT864AG-10B	MICRON	获取价格	8,16 MEG x 64 SDRAM DIMMs
MT8LSDT864AG-10C	MICRON	获取价格	8,16 MEG x 64 SDRAM DIMMs

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