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MT8LSDT3264AG-10E PDF预览

MT8LSDT3264AG-10E

更新时间: 2024-11-17 22:24:55
品牌 Logo 应用领域
镁光 - MICRON 动态存储器
页数 文件大小 规格书
24页 609K
描述
SYNCHRONOUS DRAM MODULE

MT8LSDT3264AG-10E 数据手册

 浏览型号MT8LSDT3264AG-10E的Datasheet PDF文件第2页浏览型号MT8LSDT3264AG-10E的Datasheet PDF文件第3页浏览型号MT8LSDT3264AG-10E的Datasheet PDF文件第4页浏览型号MT8LSDT3264AG-10E的Datasheet PDF文件第5页浏览型号MT8LSDT3264AG-10E的Datasheet PDF文件第6页浏览型号MT8LSDT3264AG-10E的Datasheet PDF文件第7页 
256MB / 512MB (x64)  
168-PIN SDRAM DIMMs  
MT8LSDT3264A(I) - 256MB  
MT16LSDT6464A(I) - 512MB  
For the latest data sheet, please refer to the Micron Web  
site: www.micron.com/moduleds  
SYNCHRONOUS  
DRAM MODULE  
Fe a t u re s  
Fig u re 1: 168-Pin DIMM (MO–161)  
• PC100- and PC133-compliant  
• JEDEC-standard 168-pin, dual in-line memory  
module (DIMM)  
Standard  
• Unbuffered  
• 256MB (32 Meg x 64), 512MB (64 Meg x 64)  
• Single +3.3V ±0.3V power supply  
• Fully synchronous; all signals registered on positive  
edge of system clock  
• Internal pipelined operation; colum n address can  
be changed every clock cycle  
Low Profile  
Internal SDRAM banks for hiding row access/ precharge  
• Program m able burst lengths: 1, 2, 4, 8, or full page  
Auto Precharge, including Concurrent Auto  
Precharge, and Auto Refresh Modes  
• 64ms, 8,192 cycle Auto Refresh cycle  
• Self Refresh Mode  
LVTTL-com patible inputs and outputs  
• Serial Presence-Detect (SPD)  
Ta b le 2:  
Tim in g p a ra m e t e rs  
OPTIONS  
• Package  
MARKING  
PC100  
CL - RCD - RP  
PC133  
MODULE  
MARKINGS  
t
t
t
t
CL - RCD - RP  
Unbuffered  
A
G
-13E  
-133  
-10E  
2 - 2 - 2  
2 - 2 - 2  
2 - 2 - 2  
2 - 2 - 2  
3 - 3 - 3  
NA  
168-pin DIMM (gold)  
• Operating Tem perature Range  
Commercial (0°C to +70°C)  
Industrial (-40°C to +85°C)1  
• Memory Clock/ CAS Latency  
(133 MHz)/ CL = 2  
None  
I
-13E  
-133  
-10E  
Ta b le 3:  
Pa rt Nu m b e rs  
(133 MHz)/ CL = 3  
(100 MHz)/ CL = 2  
SYSTEM  
PARTNUMBER1  
CONFIGURATION BUS SPEED  
NOTE:  
MT8LSDT3264AG-13E_  
MT8LSDT3264AG(I)-133_  
MT8LSDT3264AG-10E_  
MT16LSDT6464AG-13E_  
MT16LSDT6464AG(I)-133_  
MT16LSDT6464AG-10E_  
NOTE:  
32 Meg x 64  
32 Meg x 64  
32 Meg x 64  
64 Meg x 64  
64 Meg x 64  
64 Meg x 64  
133 MHz  
133 MHz  
100 MHz  
133 MHz  
133 MHz  
100 MHz  
1. Consult Micron for availability; Industrial Tempera-  
ture Option available in -133 speed only.  
Ta b le 1:  
Ad d re ss Ta b le  
256MB  
MODULE  
512MB  
MODULE  
8K  
8K  
Refresh Count  
Device Banks  
Device Configuration  
Row Addressing  
Column Addressing  
Module Banks  
4 (BA0, BA1)  
4 (BA0, BA1)  
32 Meg x 8  
8K (A0–A12)  
1K (A0–A9)  
2 (S0,S2; S1,S3)  
1. The designators for component and PCB revision  
are the last two characters of each part number.  
Consult factory for current revision codes. Example:  
MT8LSDT3264AG-133B1.  
32 Meg x 8  
8K (A0–A12)  
1K (A0–A9)  
1 (S0,S2)  
32,64 Meg x 64 SDRAM DIMMs  
SD8_16C32_64x64AG_C.fm - Rev. C 11/02  
Micron Technology, Inc., reserves the right to change products or specifications without notice.  
©2002, Micron Technology Inc.  
1

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