Datasheet > MT46H16M16

MT46H16M16

更新时间： 2024-11-18 04:14:19

品牌	Logo	应用领域
镁光 - MICRON		动态存储器双倍数据速率
页数	文件大小	规格书
3页	113K
描述
Mobile Double Data Rate (DDR) SDRAM

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中文翻译

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数据手册

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MT46H16M16 数据手册

‡

Preview

256Mb: 16 Meg x 16, 8 Meg x 32 Mobile DDR SDRAM

Mobile Double Data Rate (DDR) SDRAM

MT46H16M16LF – 4 Meg x 16 x 4 Banks

MT46H8M32LF – 2 Meg x 32 x 4 Banks

For a complete data sheet, please refer to www.micron.com/mobileds.

Figure 1: 60-Ball VFBGA Assignment

Features

•

VDD = +1.8V ±±.1V, VDDQ = +1.8V ±±.1V

Bidirectional data strobe per byte of data (DQS)

Internal, pipelined double data rate (DDR)

architecture; two data accesses per clock cycle

Differential clock inputs (CK and CK#)

Commands entered on each positive CK edge

DQS edge-aligned with data for READs; center-

aligned with data for WRITEs

VSS

VDDQ

VSSQ

VDDQ

VSSQ

VSS

DQ15

VSSQ

VDDQ

DQ1

DQ3

DQ5

DQ7

DQ0

DQ2

DQ4

DQ6

LDQS

VDD

VSSQ

VDDQ

VSSQ

VDDQ

VDD

•

DQ13 DQ14

DQ11 DQ12

•

Four internal banks for concurrent operation

Data masks (DM) for masking write data–one mask

per byte

DQ9

UDQS

UDM

DQ10

DQ8

•

Programmable burst lengths: 2, 4, 8, 16 or full page

Concurrent auto precharge option is supported

Auto refresh and self refresh modes

1.8V LVCMOS compatible inputs

On-chip temperature sensor to control refresh rate

Partial array self refresh (PASR)

Deep power-down (DPD)

Selectable output drive (DS)

Clock stop capability

A13, NC LDM

CKE

CK#

A12

WE#

CS#

CAS#

BA0

RAS#

BA1

A11

A10/AP

VSS

VDD

Options

Marking

•

VDD/VDDQ

1.8V/1.8V

Configuration

Table 1: Configuration Addressing

•

Architecture

16 Meg x 16

8 Meg x 32

•

16 Meg x 16 (4 Meg x 16 x 4 banks)

8 Meg x 32 (2 Meg x 32 x 4 banks)

16M16

8M32

4 Meg x 16 x 4

2 Meg x 32 x 4

Configuration

•

Plastic Package

•

Refresh Count

6±-Ball VFBGA

TBD

8K (A0–A12)

4 (BA0, BA1)

1K (A0–A9)

4K (A0–A11)

4 (BA0, BA1)

1K (A0–A9)

Row Addressing

Bank Addressing

Column Addressing

9±-Ball VFBGA

Timing – Cycle Time

•

6ns @ CL = 3

7.5ns @ CL = 3

1±ns @ CL = 3

-6

-75

-1±

•

Operating Temperature Range

•

Commercial (±° to +7±°C)

Industrial (-4±°C to +85°C)

None

Notes:1. Only available for x16 configuration.

2. Only available for x32 configuration.

PDF: 09005aef818ff781/Source: 09005aef818ff799

MT46H16M16.fm - Rev. A 03/05 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron

to meet Micron’s production data sheet specifications.

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与MT46H16M16相关器件

型号	品牌	获取价格	描述	数据表
MT46H16M16LF	MICRON	获取价格	Mobile Double Data Rate (DDR) SDRAM
MT46H16M16LFBF-6ITH	MICRON	获取价格	Mobile DDR SDRAM MT46H16M16LF â 4 Meg x 16
MT46H16M32LF	MICRON	获取价格	Mobile Double Data Rate (DDR) SDRAM
MT46H16M32LFB5-5 IT	MICRON	获取价格	LPDRAM
MT46H16M32LFB5-6 AIT	MICRON	获取价格	LPDRAM
MT46H16M32LFBQ-5 AAT	MICRON	获取价格	LPDRAM
MT46H16M32LG	MICRON	获取价格	512Mb: x16, x32 Mobile Low-Power DDR SDRAM Features
MT46H32M16	MICRON	获取价格	Mobile Double Data Rate (DDR) SDRAM
MT46H32M16LF	MICRON	获取价格	Mobile Double Data Rate (DDR) SDRAM
MT46H32M16LFBF-5 IT	MICRON	获取价格	LPDRAM

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