Datasheet > MT46H16M16LFBF-6ITH

MT46H16M16LFBF-6ITH

更新时间： 2024-09-16 12:27:51

品牌	Logo	应用领域
镁光 - MICRON		电子动态存储器双倍数据速率
页数	文件大小	规格书
79页	3101K
描述
Mobile DDR SDRAM MT46H16M16LF â 4 Meg x 16 x 4 banks MT46H8M32LF/LG â 2 Meg x 32 x 4 banks

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256Mb : x16, x32 Mo b ile DDR SDRAM

Fe a t u re s

Mo b ile DDR SDRAM

MT46H16M16LF – 4 Me g x 16 x 4 b a n ks

MT46H8M32LF/LG – 2 Me g x 32 x 4 b a n ks

For the latest data sheet, refer to Micron’s Web site: www.micron.com

Ta b le 2:

Ke y Tim in g Pa ra m e t e rs

Clo ck Ra t e (MHz)

Fe a t u re s

• VDD/ VDDQ = 1.70–1.95V

Acce ss Tim e

• Bidirectional data strobe per byte of data (DQS)

• Internal, pipelined double data rate (DDR)

architecture; two data accesses per clock cycle

• Differential clock inputs (CK and CK#)

• Commands entered on each positive CK edge

• DQS edge-aligned with data for READs; center-

aligned with data for WRITEs

• Four internal banks for concurrent operation

• Data masks (DM) for masking write data—one mask

per byte

Sp e e d

Gra d e

CL = 2

CL = 3

CL = 2

CL = 3

-6

83.3

166

133

6.5ns

5.0ns

6.0ns

-75

Op t io n s

• VDD/ VDDQ

– 1.8V/ 1.8V

Ma rkin g

• Configuration

• Programmable burst lengths: 2, 4, or 8

• Concurrent auto precharge option supported

• Auto refresh and self refresh modes

• 1.8V LVCMOS compatible inputs

• On-chip temperature sensor to control self refresh

rate

• Partial-array self refresh (PASR)

• Deep power-down (DPD)

• Selectable output drive (DS)

– 16 Meg x 16 (4 Meg x 16 x 4 banks)

– 8 Meg x 32 (2 Meg x 32 x 4 banks)

• Row size option

16M16

8M32

– JEDEC-standard option

– Reduced page-size option

• Plastic “green” packages

– 60-ball VFBGA 8mm x 9mm

– 90-ball VFBGA 8mm x 13mm

• Timing – cycle time

– 6ns at CL = 3

– 7.5ns at CL = 3

• Clock stop capability

• 64ms refresh period

-6

-75

• Power

– Standard

Ta b le 1:

Co n fig u ra t io n Ad d re ssin g

None

– Low IDD2P/ IDD6

• Operating temperature range

– Commercial (0°C to +70°C)

– Industrial (–40°C to +85°C)

• Design revision

Bu s

JEDEC-

Re d u ce d

Pa g e -Size

Op t io n

St a n d a rd

Wid t h

Arch it e ct u re

Op t io n

None

BA0, BA1

–

Number of banks

Bank address balls

Row address balls

Column address balls

Row address balls

Column address balls

BA0, BA1

A0–A12

A0–A8

Notes: 1. Only available for x16 configuration.

2. Only available for x32 configuration.

x16

x32

–

A0–A11

A0–A8

A0–A12

A0–A7

PDF: 09005aef82091978 / Source: 09005aef8209195b

MT46H16M16LF__1.fm - Rev. H 6/08 EN

Micron Technology, Inc., reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

12 3 4 5 6 7...79

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与MT46H16M16LFBF-6ITH相关器件

型号	品牌	获取价格	描述	数据表
MT46H16M32LF	MICRON	获取价格	Mobile Double Data Rate (DDR) SDRAM
MT46H16M32LFB5-5 IT	MICRON	获取价格	LPDRAM
MT46H16M32LFB5-6 AIT	MICRON	获取价格	LPDRAM
MT46H16M32LFBQ-5 AAT	MICRON	获取价格	LPDRAM
MT46H16M32LG	MICRON	获取价格	512Mb: x16, x32 Mobile Low-Power DDR SDRAM Features
MT46H32M16	MICRON	获取价格	Mobile Double Data Rate (DDR) SDRAM
MT46H32M16LF	MICRON	获取价格	Mobile Double Data Rate (DDR) SDRAM
MT46H32M16LFBF-5 IT	MICRON	获取价格	LPDRAM
MT46H32M16LFBF-6ITC	MICRON	获取价格	512Mb: x16, x32 Mobile Low-Power DDR SDRAM Features
MT46H32M32LFB5-5 IT	MICRON	获取价格	LPDRAM

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