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MT46H64M32LFBQ-48 IT PDF预览

MT46H64M32LFBQ-48 IT

更新时间: 2024-09-17 15:17:35
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
98页 5855K
描述
MT46H128M16LF, MT46H64M32LF

MT46H64M32LFBQ-48 IT 数据手册

 浏览型号MT46H64M32LFBQ-48 IT的Datasheet PDF文件第2页浏览型号MT46H64M32LFBQ-48 IT的Datasheet PDF文件第3页浏览型号MT46H64M32LFBQ-48 IT的Datasheet PDF文件第4页浏览型号MT46H64M32LFBQ-48 IT的Datasheet PDF文件第5页浏览型号MT46H64M32LFBQ-48 IT的Datasheet PDF文件第6页浏览型号MT46H64M32LFBQ-48 IT的Datasheet PDF文件第7页 
2Gb: x16, x32 Automotive LPDDR SDRAM  
Features  
Automotive LPDDR SDRAM  
MT46H128M16LF – 32 Meg x 16 x 4 Banks  
MT46H64M32LF – 16 Meg x 32 x 4 Banks  
Options  
Mark  
Features  
• VDD/VDDQ = 1.70–1.95V  
• VDD/VDDQ  
– 1.8V/1.8V  
• Configuration  
H
• Bidirectional data strobe per byte of data (DQS)  
• Internal, pipelined double data rate (DDR)  
architecture; two data accesses per clock cycle  
– 128 Meg x 16 (32 Meg x 16 x 4 banks) 128M16  
– 64 Meg x 32 (16 Meg x 32 x 4 banks)  
• Addressing  
64M32  
• Differential clock inputs (CK and CK#)  
– JEDEC-standard  
LF  
• Commands entered on each positive CK edge  
• Plastic "green" package  
– 60-ball VFBGA (8mm x 9mm)  
– 90-ball VFBGA (8mm x 13mm)  
• Timing – cycle time  
• DQS edge-aligned with data for READs; center-  
aligned with data for WRITEs  
DD  
BQ  
• 4 internal banks for concurrent operation  
• Data masks (DM) for masking write data; one mask  
per byte  
– 4.8ns @ CL = 3 (208 MHz)  
• Special Options  
-48  
A
• Programmable burst lengths (BL): 2, 4, 8, or 16  
• Concurrent auto precharge option is supported  
• Auto refresh and self refresh modes  
• 1.8V LVCMOS-compatible inputs  
Temperature-compensated self refresh (TCSR)2  
• Partial-array self refresh (PASR)  
– Automotive (package-level burn-in)  
• Operating temperature range  
– From –40˚C to +85˚C  
IT  
AT  
:C  
– From –40˚C to +105˚C1  
• Design revision  
1. Contact factory for availability.  
Notes:  
• Deep power-down (DPD)  
2. Self refresh supported up to 85 ºC.  
• Status read register (SRR)  
• Selectable output drive strength (DS)  
• Clock stop capability  
• 64ms refresh; 32ms for the automotive temperature  
range  
Table 1: Key Timing Parameters (CL = 3)  
Speed Grade  
Clock Rate  
Access Time  
-48  
208 MHz  
4.8ns  
Table 2: Configuration Addressing – 2Gb  
Architecture  
128 Meg x 16  
64 Meg x 32  
16 Meg x 32 x 4 banks  
8K  
Configuration  
Refresh count  
32 Meg x 16 x 4 banks  
8K  
Row addressing  
Column addressing  
16K A[13:0]  
2K A11, A[9:0]  
16K A[13:0]  
1K A[9:0]  
09005aef8541eee0  
t89m_auto_lpddr.pdf - Rev. I 05/18 EN  
Micron Technology, Inc. reserves the right to change products or specifications without notice.  
© 2013 Micron Technology, Inc. All rights reserved.  
1
Products and specifications discussed herein are subject to change by Micron without notice.  

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