Datasheet > MSN0412W-SOP8

MSN0412W-SOP8

更新时间： 2024-11-15 01:17:55

品牌	Logo	应用领域
摩矽 - MORESEMI		/
页数	文件大小	规格书
6页	588K
描述
40V(D-S) N-Channel Enhancement Mode Power MOS FET

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中文翻译

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数据手册

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MSN0412W-SOP8 数据手册

MSN0412W

40V(D-S) N-Channel Enhancement Mode Power MOS FET

General Features

● V_DS=40V,I_D=12A

R_DS(ON)<12mΩ @ V_GS=10V (Typ. 8.4 mΩ)

_DS(ON)<18mΩ @ V_GS=4.5V (Typ. 12.3 mΩ)

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Lead Free

Application

● Load switching

● Hard switched and high frequency circuits

● Uninterruptible power supply

Marking and pin Assignment

PIN Configuration

Schematic diagram

SOP-8 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

MSN0412W

SOP-8

Ø330mm

12mm

2500 units

Absolute Maximum Ratings (T_A=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

VGS

8.5

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

Maximum Power Dissipation

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient^{(Note 2)}

R_θJA

41.7

℃/W

MORE Semiconductor Company Limited

http://www.moresemi.com

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