Datasheet > MSN0409W

MSN0409W

更新时间： 2024-11-15 01:19:15

品牌	Logo	应用领域
摩矽 - MORESEMI		/
页数	文件大小	规格书
6页	700K
描述
40V(D-S) N-Channel Enhancement Mode Power MOS FET

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中文翻译

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数据手册

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MSN0409W 数据手册

MSN0409W

40V(D-S) N-Channel Enhancement Mode Power MOS FET

General Features

●

V_DS=40V,I_D=9A

_DS(ON)< 16mΩ @ V_GS=10V

_DS(ON)< 24mΩ @ V_GS=4.5V

● High density cell design for ultra low Rdson

● Fully characterized avalanche voltage and current

● Good stability and uniformity with high E_AS

● Excellent package for good heat dissipation

● Special process technology for high ESD capability

Lead Free

Application

● Load switching

Marking and pin assignment

● Hard switched and high frequency circuits

● Uninterruptible power supply

PIN Configuration

Schematic diagram

SOP-8 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Ø330mm

Tape width

Quantity

MSN0409W

SOP-8

12mm

2500 units

Absolute Maximum Ratings (T_C=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

V^DS

±20

V^GS

6.4

I_D

Drain Current-Continuous(T_C=100℃)

Pulsed Drain Current

I_D(100℃)

I_DM

Maximum Power Dissipation

℃

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

MORE Semiconductor Company Limited

http://www.moresemi.com

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