Datasheet > MSM56V16160F

MSM56V16160F

更新时间： 2024-09-20 22:54:39

品牌	Logo	应用领域
冲电气 - OKI		/
页数	文件大小	规格书
31页	2987K
描述
2-Bank x 524,288 Word x 16 Bit SYNCHRONOUS DYNAMIC RAM

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MSM56V16160F 数据手册

This version : Sep.1999

Semiconductor

MSM56V16160F

2-Bank 524,288 Word 16 Bit SYNCHRONOUS DYNAMIC RAM

DESCRIPTION

The MSM56V16160F is a 2-Bank ´ 524,288-word ´ 16 bit Synchronous dynamic RAM, fabricated in OKI’s

CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL

compatible.

FEATURES

Silicon gate , quadruple polysilicon CMOS , 1-transistor memory cell

2-bank ´ 524,288-word ´ 16bit configuration

3.3V power supply ± 0.3V tolerance

Input

: LVTTL compatible

Output

Refresh : 4096 cycles/64 ms

Programmable data transfer mode

- CAS Latency (1,2,3)

- Burst Length (1,2,4,8,Full page)

- Data scramble (sequential , interleave)

CBR auto-refresh, Self-refresh capability

Package:

50-pin 400mil plastic TSOP (Type II) (TSOPII50-P-400-0.80-K) (Product : MSM56V16160F-xxTS-K)

xx : indicates speed rank.

PRODUCT FAMILY

Access Time (Max.)

Max.

Frequency

Family

AC3

AC2

MSM56V16160F-8

MSM56V16160F-10

125MHz

100MHz

9ns

6ns

9ns

1/30

12 3 4 5 6 7...31

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与MSM56V16160F相关器件

型号	品牌	获取价格	描述	数据表
MSM56V16160F-8T3-K	OKI	获取价格	Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, LEAD FREE, PLASTIC,
MSM56V16160F-8TS-K	OKI	获取价格	Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-50
MSM56V16161N	LAPIS	获取价格	2-BankÃ524,288-WordÃ16-Bit SYNCHRONOUS DYNA
MSM56V16161N-10	LAPIS	获取价格	2-BankÃ524,288-WordÃ16-Bit SYNCHRONOUS DYNA
MSM56V16161N-10	ROHM	获取价格	SYNCHRONOUS DYNAMIC RAM
MSM56V16161N-6	LAPIS	获取价格	2-BankÃ524,288-WordÃ16-Bit SYNCHRONOUS DYNA
MSM56V16161N-6	ROHM	获取价格	SYNCHRONOUS DYNAMIC RAM
MSM56V16161N-7	LAPIS	获取价格	2-BankÃ524,288-WordÃ16-Bit SYNCHRONOUS DYNA
MSM56V16161N-7	ROHM	获取价格	SYNCHRONOUS DYNAMIC RAM
MSM56V16161N-75	LAPIS	获取价格	2-BankÃ524,288-WordÃ16-Bit SYNCHRONOUS DYNA