Datasheet > MSM56V16161N-75

MSM56V16161N-75

更新时间： 2024-11-27 01:07:55

品牌	Logo	应用领域
罗姆 - ROHM		动态存储器光电二极管内存集成电路
页数	文件大小	规格书
44页	989K
描述
SYNCHRONOUS DYNAMIC RAM

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MSM56V16161N-75 数据手册

FEDD56V16161N-01

Issue Date : April 27, 2016

MSM56V16161N

2-Bank×524,288-Word×16-Bit SYNCHRONOUS DYNAMIC RAM

DESCRIPTION

The MSM56V16161N is a 2-Bank  524,288-word  16-bit Synchronous dynamic RAM. The device

operates at 3.3V. The inputs and outputs are LVTTL compatible.

FEATURES

Product Name

Organization

MSM56V16161N

2Bank x 524,288Word x 16Bit

2,048Row x 256Column

3.3V0.3V

Address Size

Power Supply VCC (Core)

Power Supply VCCQ (I/O)

Interface

3.3V0.3V

LVTTL compatible

Operating Frequency

Operating Temperature

Function

Max. 166MHz (Speed Rank 6)

0 to 70°C

Standard SDRAM command interface

2, 3

/CAS Latency

Burst Length

1, 2, 4, 8, Full page

Burst Type

Sequential, Interleave

Burst, Single

Write Mode

Refresh

Auto-Refresh, 4,096cycle/64ms (0°C  Ta  70°C), Self-Refresh

Package

50-Pin Plastic TSOP(II) (Cu frame)

(P-TSOP(2)50-400-0.80-ZK)

PRODUCT FAMILY

Access Time (Max.)

Family

Max. Frequency

tAC2

5.4ns

6ns

tAC3

5.4ns

6ns

MSM56V16161N -6

MSM56V16161N -7

MSM56V16161N -75

MSM56V16161N -10

166MHz

143MHz

133MHz

100MHz

1/44

12 3 4 5 6 7...44

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