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MSM56V16800F PDF预览

MSM56V16800F

更新时间: 2024-11-25 22:54:39
品牌 Logo 应用领域
冲电气 - OKI /
页数 文件大小 规格书
30页 2980K
描述
2-Bank x 1,048,576 Word x 8 Bit SYNCHRONOUS DYNAMIC RAM

MSM56V16800F 数据手册

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This version : Dec.1999  
Semiconductor  
MSM56V16800F  
2-Bank 1,048,576 Word 8 Bit SYNCHRONOUS DYNAMIC RAM  
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DESCRIPTION  
The MSM56V16800F is a 2-Bank ´ 1,048,576-word ´ 8 bit Synchronous dynamic RAM, fabricated in OKI’s  
CMOS silicon-gate process technology. The device operates at 3.3V. The inputs and outputs are LVTTL  
compatible.  
FEATURES  
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Silicon gate , quadruple polysilicon CMOS , 1-transistor memory cell  
2-bank ´ 1,048,576-word ´ 8bit configuration  
3.3V power supply ± 0.3V tolerance  
Input  
: LVTTL compatible  
: LVTTL compatible  
Output  
Refresh : 4096 cycles/64 ms  
Programmable data transfer mode  
- CAS Latency (1,2,3)  
- Burst Length (1,2,4,8,Full page)  
- Data scramble (sequential , interleave)  
CBR auto-refresh, Self-refresh capability  
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Package:  
44-pin 400mil plastic TSOP (Type II) (TSOPII44-P-400-0.80-K) (Product : MSM56V16800F-xxTS-K)  
xx : indicates speed rank.  
PRODUCT FAMILY  
Access Time (Max.)  
Max.  
Frequency  
Family  
t
t
AC3  
AC2  
MSM56V16800F-8A  
MSM56V16800F-8  
MSM56V16800F-10  
125MHz  
125MHz  
100MHz  
6ns  
9ns  
9ns  
6ns  
6ns  
9ns  
1/30  

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