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MSM56V16800F-8ATS-K PDF预览

MSM56V16800F-8ATS-K

更新时间: 2024-11-27 10:20:55
品牌 Logo 应用领域
冲电气 - OKI 时钟动态存储器光电二极管内存集成电路
页数 文件大小 规格书
31页 3088K
描述
Synchronous DRAM, 2MX8, 6ns, CMOS, PDSO44, 0.400 INCH, 0.80 MM PITCH, PLASTIC, TSOP2-44

MSM56V16800F-8ATS-K 技术参数

生命周期:Transferred零件包装代码:TSOP2
包装说明:TSOP2,针数:44
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8542.32.00.02风险等级:5.4
访问模式:DUAL BANK PAGE BURST最长访问时间:6 ns
其他特性:AUTO/SELF REFRESHJESD-30 代码:R-PDSO-G44
长度:18.41 mm内存密度:16777216 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:8
功能数量:1端口数量:1
端子数量:44字数:2097152 words
字数代码:2000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:2MX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE认证状态:Not Qualified
座面最大高度:1.2 mm自我刷新:YES
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子形式:GULL WING端子节距:0.8 mm
端子位置:DUAL宽度:10.16 mm

MSM56V16800F-8ATS-K 数据手册

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FEDD56V16800F-01  
This version: November. 2000  
Previous version :  
1
Semiconductor  
MSM56V16800F  
2-Bank × 1,048,576-Word × 8-Bit SYNCHRONOUS DYNAMIC RAM  
DESCRIPTION  
The MSM56V16800F is a 2-Bank × 1,048,576-word × 8-bit Synchronous dynamic RAM fabricated in  
Oki’s silicon-gate CMOS technology. The device operates at 3.3V. The inputs and outputs are LVTTL  
compatible.  
FEATURES  
Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell  
2-Bank × 1,048,576-word × 8-bit configuration  
Single 3.3V power supply, ±0.3V tolerance  
Input : LVTTL compatible  
Output : LVTTL compatible  
Refresh : 4096 cycles/64ms  
Programmable data transfer mode  
- CAS Latency (1,2,3)  
- Burst Length (1,2,4,8,Full Page)  
- Data scramble (sequential, interleave)  
CBR auto-refresh, Self-refresh capability  
Packages:  
44-pin 400mil plastic TSOP (TypeII) (TSOPII44-P-400-0.80-1K)(Product : MSM56V16800F-xxTS-K)  
xx indicates speed rank.  
PRODUCT FAMILY  
Access Time (Max.)  
Max.  
Family  
Frequency  
t
t
AC3  
AC2  
MSM56V16800F-8A  
MSM56V16800F-10  
125MHz  
100MHz  
6ns  
9ns  
6ns  
9ns  
1/31  

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