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MSM5718B70 PDF预览

MSM5718B70

更新时间: 2024-11-25 22:24:23
品牌 Logo 应用领域
冲电气 - OKI 动态存储器
页数 文件大小 规格书
40页 261K
描述
18-Megabit RDRAM (2M x 9)

MSM5718B70 数据手册

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¡ Semiconductor  
E2G1033-17-54  
MSM5718B70  
18-Megabit RDRAM (2M ¥ 9)  
DESCRIPTION  
The18-MegabitRambusDRAM(RDRAM™)isanextremelyhigh-speedCMOSDRAMorganized  
as 2M words by 9 bits. It is capable of bursting up to 256 bytes of data at less than 2 nanoseconds per  
byte. The use of Rambus Signaling Logic (RSL) technology makes transfer rates greater than 500  
MHz achievable while using conventional system and board design methodologies. Lower effective  
latencyisattainedbyoperatingthedual2KBytesenseamplifiersashighspeedcaches, andbyusing  
random access mode to facilitate large block transfers.  
RDRAMs are general purpose high-performance memory devices suitable for use in a broad range  
of applications including PC and consumer main memory, graphics, video, and any other  
application where high-performance is required.  
FEATURES  
• Rambus Interface:  
Over 500 MB/sec peak transfer rate per RDRAM  
Rambus Signaling Logic (RSL) interface  
Synchronous protocol for fast block-oriented transfers  
Direct connection to Rambus ASICs, MPUs, and Peripherals  
15 active signals require just 32 total pins on the controller interface (including power)  
3.3 V operation  
Additional/multiple Rambus Channels provide an additional 500 MB/second band-width each  
• Dual 2KByte sense amplifiers may be operated as caches for low latency access  
• Random Access mode enables any burst order at full band width  
• Featuresforgraphicsincluderandom-accessmode,write-per-bitandmask-per-bitoperations  
• Control and refresh logic entirely self-contained  
• On-chip registers for flexible addressing and timing  
• Available in horizontal surface mount plastic package (SHP32-P-1125-0.65-K)  
1

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