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MSM56V16161N PDF预览

MSM56V16161N

更新时间: 2024-11-27 01:05:39
品牌 Logo 应用领域
LAPIS 动态存储器内存集成电路
页数 文件大小 规格书
44页 992K
描述
2-Bank×524,288-Word×16-Bit SYNCHRONOUS DYNAMIC RAM

MSM56V16161N 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.7
内存集成电路类型:SYNCHRONOUS DRAMBase Number Matches:1

MSM56V16161N 数据手册

 浏览型号MSM56V16161N的Datasheet PDF文件第2页浏览型号MSM56V16161N的Datasheet PDF文件第3页浏览型号MSM56V16161N的Datasheet PDF文件第4页浏览型号MSM56V16161N的Datasheet PDF文件第5页浏览型号MSM56V16161N的Datasheet PDF文件第6页浏览型号MSM56V16161N的Datasheet PDF文件第7页 
FEDD56V16161N-01  
Issue Date : April 27, 2016  
MSM56V16161N  
2-Bank×524,288-Word×16-Bit SYNCHRONOUS DYNAMIC RAM  
DESCRIPTION  
The MSM56V16161N is a 2-Bank 524,288-word 16-bit Synchronous dynamic RAM. The device  
operates at 3.3V. The inputs and outputs are LVTTL compatible.  
FEATURES  
Product Name  
Organization  
MSM56V16161N  
2Bank x 524,288Word x 16Bit  
2,048Row x 256Column  
3.3V0.3V  
Address Size  
Power Supply VCC (Core)  
Power Supply VCCQ (I/O)  
Interface  
3.3V0.3V  
LVTTL compatible  
Operating Frequency  
Operating Temperature  
Function  
Max. 166MHz (Speed Rank 6)  
0 to 70°C  
Standard SDRAM command interface  
2, 3  
/CAS Latency  
Burst Length  
1, 2, 4, 8, Full page  
Burst Type  
Sequential, Interleave  
Burst, Single  
Write Mode  
Refresh  
Auto-Refresh, 4,096cycle/64ms (0°C Ta 70°C), Self-Refresh  
Package  
50-Pin Plastic TSOP(II) (Cu frame)  
(P-TSOP(2)50-400-0.80-ZK)  
PRODUCT FAMILY  
Access Time (Max.)  
Family  
Max. Frequency  
tAC2  
5.4ns  
5.4ns  
5.4ns  
6ns  
tAC3  
5.4ns  
5.4ns  
5.4ns  
6ns  
MSM56V16161N -6  
MSM56V16161N -7  
MSM56V16161N -75  
MSM56V16161N -10  
166MHz  
143MHz  
133MHz  
100MHz  
1/44  

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