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MSM56V16160DH PDF预览

MSM56V16160DH

更新时间: 2024-11-25 22:54:39
品牌 Logo 应用领域
冲电气 - OKI /
页数 文件大小 规格书
30页 337K
描述
2-Bank x 524,288-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM

MSM56V16160DH 数据手册

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E2G1049-18-33  
Preliminary  
This version: Mar. 1998  
¡ Semiconductor  
MSM56V16160D/DH  
2-Bank ¥ 524,288-Word ¥ 16-Bit SYNCHRONOUS DYNAMIC RAM  
DESCRIPTION  
The MSM56V16160D/DH is a 2-bank ¥ 524,288-word ¥ 16-bit synchronous dynamic RAM,  
fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The  
inputs and outputs are LVTTL compatible.  
FEATURES  
• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell  
• 2-bank ¥ 524,288-word ¥ 16-bit configuration  
• 3.3 V power supply, ±0.3 V tolerance  
• Input  
: LVTTL compatible  
• Output : LVTTL compatible  
• Refresh : 4096 cycles/64 ms  
• Programmable data transfer mode  
CAS latency (1, 2, 3)  
CAS latency (2, 3)*1  
– Burst length (1, 2, 4, 8, full page)  
– Burst length (1, 2, 4, 8)*1  
– Data scramble (sequential, interleave)  
*1 : H version only.  
• CBR auto-refresh, Self-refresh capability  
• Package:  
50-pin 400 mil plastic TSOP (Type II)  
(TSOPII50-P-400-0.80-K)  
(Product : MSM56V16160D/DH-xxTS-K)  
xx indicates speed rank.  
PRODUCT FAMILY  
Access Time (Max.)  
Max.  
Frequency  
Family  
tAC2  
9 ns  
tAC3  
MSM56V16160D-10  
MSM56V16160D-12  
MSM56V16160DH-15  
100 MHz  
83 MHz  
66 MHz  
9 ns  
10 ns  
9 ns  
14 ns  
9 ns  
1/30  

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