MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF5S19090L/D
MRF5S19090LR3 and MRF5S19090LSR3 replaced by MRF5S19090HR3 and
MRF5S19090HSR3. “H” suffix indicates lower thermal resistance package.
The RF MOSFET Line
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S19090LR3
MRF5S19090LSR3
Designed for PCN and PCS base station applications with frequencies up to
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
1990 MHz, 18 W AVG.,
2 x N-CDMA, 28 V
LATERAL N-CHANNEL
RF POWER MOSFETs
• Typical 2-Carrier N-CDMA Performance for VDD = 28 Volts,
I
DQ = 850 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 -885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power — 18 Watts Avg.
Power Gain — 14.5 dB
Efficiency — 25.8%
ACPR — -51 dB
CASE 465-06, STYLE 1
NI-780
IM3 — -37 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
MRF5S19090LR3
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz,
90 Watts CW Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Qualified Up to a Maximum of 32 VDD Operation
CASE 465A-06, STYLE 1
NI-780S
MRF5S19090LSR3
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Symbol
Value
65
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
V
-0.5, +15
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
261
1.49
Watts
W/°C
C
D
Storage Temperature Range
Operating Junction Temperature
T
- 65 to +200
200
°C
°C
stg
T
J
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value (1,2)
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
Case Temperature 80°C, 18 W CW
R
θ
JC
°C/W
0.67
0.75
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF DEVICE DATA
MRF5S19090LR3 MRF5S19090LSR3
For More Information On This Product,
Go to: www.freescale.com
Go to: www.freescale.com
Motorola, Inc. 2004
For More Information On This Product,
1