5秒后页面跳转
捷配首页

Datasheet > 晶体管 > 射频场效应晶体管> MRF5S19090LSR3
MRF5S19090LSR3 PDF预览

MRF5S19090LSR3

更新时间： 2024-02-02 13:22:02
品牌 Logo 应用领域
摩托罗拉 - MOTOROLA 晶体射频场效应晶体管放大器
页数 文件大小 规格书
12页 413K
描述
1990 MHz, 18 W AVG 2 x N-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs

阅读下载

获取价格

MRF5S19090LSR3 技术参数

生命周期：Transferred包装说明：FLATPACK, R-CDFP-F2
针数：2Reach Compliance Code：unknown
风险等级：5.16外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：65 V
FET 技术：METAL-OXIDE SEMICONDUCTOR最高频带：L BAND
JESD-30 代码：R-CDFP-F2元件数量：1
端子数量：2工作模式：ENHANCEMENT MODE
最高工作温度：200 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLATPACK
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：261 W
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子形式：FLAT
端子位置：DUAL晶体管应用：AMPLIFIER
晶体管元件材料：SILICONBase Number Matches：1

MRF5S19090LSR3 数据手册

 浏览型号MRF5S19090LSR3的Datasheet PDF文件第2页浏览型号MRF5S19090LSR3的Datasheet PDF文件第3页浏览型号MRF5S19090LSR3的Datasheet PDF文件第4页浏览型号MRF5S19090LSR3的Datasheet PDF文件第5页浏览型号MRF5S19090LSR3的Datasheet PDF文件第6页浏览型号MRF5S19090LSR3的Datasheet PDF文件第7页 
MOTOROLA  
SEMICONDUCTOR TECHNICAL DATA  
Freescale Semiconductor, Inc.  
Order this document  
by MRF5S19090L/D  
MRF5S19090LR3 and MRF5S19090LSR3 replaced by MRF5S19090HR3 and  
MRF5S19090HSR3. “H” suffix indicates lower thermal resistance package.  
The RF MOSFET Line  
RF Power Field Effect Transistors  
N-Channel Enhancement-Mode Lateral MOSFETs  
MRF5S19090LR3  
MRF5S19090LSR3  
Designed for PCN and PCS base station applications with frequencies up to  
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier  
applications.  
1990 MHz, 18 W AVG.,  
2 x N-CDMA, 28 V  
LATERAL N-CHANNEL  
RF POWER MOSFETs  
• Typical 2-Carrier N-CDMA Performance for VDD = 28 Volts,  
I
DQ = 850 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz  
IS-95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)  
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured  
over a 30 kHz Bandwidth at f1 -885 kHz and f2 +885 kHz. Distortion  
Products Measured over 1.2288 MHz Bandwidth at f1 -2.5 MHz and  
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.  
Output Power — 18 Watts Avg.  
Power Gain — 14.5 dB  
Efficiency — 25.8%  
ACPR — -51 dB  
CASE 465-06, STYLE 1  
NI-780  
IM3 — -37 dBc  
• Internally Matched, Controlled Q, for Ease of Use  
• High Gain, High Efficiency and High Linearity  
• Integrated ESD Protection  
MRF5S19090LR3  
• Designed for Maximum Gain and Insertion Phase Flatness  
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz,  
90 Watts CW Output Power  
• Excellent Thermal Stability  
• Characterized with Series Equivalent Large-Signal Impedance Parameters  
• Qualified Up to a Maximum of 32 VDD Operation  
CASE 465A-06, STYLE 1  
NI-780S  
MRF5S19090LSR3  
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.  
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.  
MAXIMUM RATINGS  
Rating  
Symbol  
Value  
65  
Unit  
Vdc  
Vdc  
Drain-Source Voltage  
Gate-Source Voltage  
V
DSS  
V
-0.5, +15  
GS  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
261  
1.49  
Watts  
W/°C  
C
D
Storage Temperature Range  
Operating Junction Temperature  
T
- 65 to +200  
200  
°C  
°C  
stg  
T
J
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Value (1,2)  
Unit  
Thermal Resistance, Junction to Case  
Case Temperature 80°C, 90 W CW  
Case Temperature 80°C, 18 W CW  
R
θ
JC  
°C/W  
0.67  
0.75  
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to  
access the MTTF calculators by product.  
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.  
Select Documentation/Application Notes - AN1955.  
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and  
packaging MOS devices should be observed.  
REV 1  
Go to: www.freescale.com  
Motorola, Inc. 2004  
For More Information On This Product,  
 
1234567...12

下载PDF

与MRF5S19090LSR3相关器件

型号 品牌 描述 获取价格 数据表
MRF5S19100HD MOTOROLA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MO

获取价格
MRF5S19100HR3 MOTOROLA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MO

获取价格
MRF5S19100HR3 FREESCALE RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

获取价格
MRF5S19100HSR3 FREESCALE RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

获取价格
MRF5S19100HSR3 MOTOROLA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MO

获取价格
MRF5S19100LSR3 MOTOROLA L BAND, Si, N-CHANNEL, RF POWER, MOSFET, NI-780S, CASE 465A-06, 2 PIN

获取价格

与MRF5S19090LSR3相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证