MRF1518T1

更新时间： 2024-01-07 18:15:30

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体射频场效应晶体管功率场效应晶体管放大器
页数	文件大小	规格书
20页	754K
描述
RF Power Field Effect Transistor

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技术参数
数据手册

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MRF1518T1 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PQSO-N4	针数：	4
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.75	风险等级：	5.1
Is Samacsys：	N	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	40 V
最大漏极电流 (Abs) (ID)：	4 A	最大漏极电流 (ID)：	4 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PQSO-N4	JESD-609代码：	e0
湿度敏感等级：	1	元件数量：	1
端子数量：	4	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	62.5 W	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	NO LEAD
端子位置：	QUAD	处于峰值回流温度下的最长时间：	40
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

MRF1518T1 数据手册

APPLICATIONS INFORMATION

DESIGN CONSIDERATIONS

This device is a common-source, RF power, N-Channel

enhancement mode, Lateral Metal-Oxide Semiconductor

Field-Effect Transistor (MOSFET). Freescale Application

Note AN211A, “FETs in Theory and Practice”, is suggested

reading for those not familiar with the construction and char-

acteristics of FETs.

This surface mount packaged device was designed pri-

marily for VHF and UHF portable power amplifier applica-

tions. Manufacturability is improved by utilizing the tape and

reel capability for fully automated pick and placement of

parts. However, care should be taken in the design process

to insure proper heat sinking of the device.

drain-source voltage under these conditions is termed

_DS(on). For MOSFETs, V_DS(on)has a positive temperature

coefficient at high temperatures because it contributes to the

power dissipation within the device.

BV_DSSvalues for this device are higher than normally re-

quired for typical applications. Measurement of BV_DSSis not

recommended and may result in possible damage to the de-

vice.

GATE CHARACTERISTICS

The gate of the RF MOSFET is a polysilicon material, and

is electrically isolated from the source by a layer of oxide.

The DC input resistance is very high - on the order of 10⁹Ω

— resulting in a leakage current of a few nanoamperes.

Gate control is achieved by applying a positive voltage to

the gate greater than the gate-to-source threshold voltage,

The major advantages of Lateral RF power MOSFETs in-

clude high gain, simple bias systems, relative immunity from

thermal runaway, and the ability to withstand severely mis-

matched loads without suffering damage.

V_GS(th)

Gate Voltage Rating — Never exceed the gate voltage

rating. Exceeding the rated V_GScan result in permanent

damage to the oxide layer in the gate region.

MOSFET CAPACITANCES

The physical structure of a MOSFET results in capacitors

between all three terminals. The metal oxide gate structure

determines the capacitors from gate-to-drain (C_gd), and

gate-to-source (C_gs). The PN junction formed during fab-

rication of the RF MOSFET results in a junction capacitance

from drain-to-source (C_ds). These capacitances are charac-

terized as input (C_iss), output (C_oss) and reverse transfer

(C_rss) capacitances on data sheets. The relationships be-

tween the inter-terminal capacitances and those given on

data sheets are shown below. The C_isscan be specified in

two ways:

Gate Termination — The gates of these devices are es-

sentially capacitors. Circuits that leave the gate open-cir-

cuited or floating should be avoided. These conditions can

result in turn-on of the devices due to voltage build-up on

the input capacitor due to leakage currents or pickup.

Gate Protection — These devices do not have an internal

monolithic zener diode from gate-to-source. If gate protec-

tion is required, an external zener diode is recommended.

Using a resistor to keep the gate-to-source impedance low

also helps dampen transients and serves another important

function. Voltage transients on the drain can be coupled to

the gate through the parasitic gate-drain capacitance. If the

gate-to-source impedance and the rate of voltage change

on the drain are both high, then the signal coupled to the gate

may be large enough to exceed the gate-threshold voltage

and turn the device on.

1. Drain shorted to source and positive voltage at the gate.

2. Positive voltage of the drain in respect to source and zero

volts at the gate.

In the latter case, the numbers are lower. However, neither

method represents the actual operating conditions in RF ap-

plications.

DC BIAS

Since this device is an enhancement mode FET, drain cur-

rent flows only when the gate is at a higher potential than the

source. RF power FETs operate optimally with a quiescent

drain current (I_DQ), whose value is application dependent.

This device was characterized at I_DQ= 150 mA, which is the

suggested value of bias current for typical applications. For

special applications such as linear amplification, I_DQmay

have to be selected to optimize the critical parameters.

The gate is a dc open circuit and draws no current. There-

fore, the gate bias circuit may generally be just a simple re-

sistive divider network. Some special applications may

require a more elaborate bias system.

Drain

= C + C

gd gs

Gate

iss

= C + C

oss

rss

= C

Source

GAIN CONTROL

DRAIN CHARACTERISTICS

Power output of this device may be controlled to some de-

gree with a low power dc control signal applied to the gate,

thus facilitating applications such as manual gain control,

ALC/AGC and modulation systems. This characteristic is

very dependent on frequency and load line.

One critical figure of merit for a FET is its static resistance

in the full-on condition. This on-resistance, R_DS(on), occurs

in the linear region of the output characteristic and is speci-

fied at a specific gate-source voltage and drain current. The

MRF1518NT1 MRF1518T1

RF Device Data

Freescale Semiconductor

1...11 12 131415 16 17...20

中文翻译

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与MRF1518T1相关器件

型号	品牌	获取价格	描述	数据表
MRF151A	TE	获取价格	The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET
MRF151A	MACOM	获取价格	MOSFET
MRF151BD	MACOM	获取价格	RF Power MOSFET Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
MRF151D	MACOM	获取价格	RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET
MRF151G	ASI	获取价格	RF FIELD-EFFECT POWER TRANSISTOR
MRF151G	MOTOROLA	获取价格	N-CHANNEL BROADBAND RF POWER MOSFET
MRF151G	TE	获取价格	N-CHANNEL BROADBAND RF POWER MOSFET
MRF151G	MACOM	获取价格	1 RF Power MSOFET Transistor 300 W, 50 V, 175 MHz N-Channel Broadband MOSFET
MRF151MP	ASI	获取价格	暂无描述
MRF151MQ	ASI	获取价格	RF Power Field-Effect Transistor

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