MRF1518T1

更新时间： 2024-01-18 13:26:22

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体射频场效应晶体管功率场效应晶体管放大器
页数	文件大小	规格书
20页	754K
描述
RF Power Field Effect Transistor

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MRF1518T1 技术参数

是否Rohs认证：	不符合	生命周期：	Transferred
包装说明：	SMALL OUTLINE, R-PQSO-N4	针数：	4
Reach Compliance Code：	not_compliant	ECCN代码：	EAR99
HTS代码：	8541.29.00.75	风险等级：	5.1
Is Samacsys：	N	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	40 V
最大漏极电流 (Abs) (ID)：	4 A	最大漏极电流 (ID)：	4 A
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-PQSO-N4	JESD-609代码：	e0
湿度敏感等级：	1	元件数量：	1
端子数量：	4	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	N-CHANNEL
最大功率耗散 (Abs)：	62.5 W	认证状态：	Not Qualified
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin/Lead (Sn/Pb)	端子形式：	NO LEAD
端子位置：	QUAD	处于峰值回流温度下的最长时间：	40
晶体管应用：	AMPLIFIER	晶体管元件材料：	SILICON
Base Number Matches：	1

MRF1518T1 数据手册

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MRF1518NT1 MRF1518T1

Document Number:

Rev. 6, 3/2005

MRF1518

RF Device Data

Freescale Semiconductor

1...17 18 1920

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MRF151A	TE	The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET	获取价格
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MRF151BD	MACOM	RF Power MOSFET Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET	获取价格
MRF151D	MACOM	RF Power Field-Effect Transistor 150 W, 50 V, 175 MHz N-Channel Broadband MOSFET	获取价格
MRF151G	ASI	RF FIELD-EFFECT POWER TRANSISTOR	获取价格
MRF151G	MOTOROLA	N-CHANNEL BROADBAND RF POWER MOSFET	获取价格

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