生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-CDFM-F2 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 其他特性: | DIFFUSED BALLAST RESISTORS |
外壳连接: | BASE | 基于收集器的最大容量: | 40 pF |
集电极-发射极最大电压: | 28 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 20 | 最高频带: | L BAND |
JESD-30 代码: | R-CDFM-F2 | 元件数量: | 1 |
端子数量: | 2 | 最高工作温度: | 200 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | NPN |
功耗环境最大值: | 83 W | 最小功率增益 (Gp): | 7 dB |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | DUAL |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
MRA1417-11 | ASI |
获取价格 |
NPN SILICON RF POWER TRANSISTOR | |
MRA1417-11H | MOTOROLA |
获取价格 |
L BAND, Si, NPN, RF POWER TRANSISTOR | |
MRA1417-2 | ASI |
获取价格 |
NPN SILICON RF POWER TRANSISTOR | |
MRA1417-2H | MOTOROLA |
获取价格 |
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN | |
MRA1417-6H | ASI |
获取价格 |
NPN SILICON RF POWER TRANSISTOR | |
MRA1417-6H | MOTOROLA |
获取价格 |
RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN | |
MRA14P | WINCHESTER |
获取价格 |
COMPSITE OUTLINE ASSY MRA xx P | |
MRA14PJTHV | WINCHESTER |
获取价格 |
Rack and Panel Connector, 14 Contact(s), Male, Solder Terminal, Plug | |
MRA14PJTHVL | WINCHESTER |
获取价格 |
Rack and Panel Connector, 14 Contact(s), Male, Solder Terminal, Plug | |
MRA14PKHV | WINCHESTER |
获取价格 |
Rack and Panel Connector, 14 Contact(s), Male, Solder Terminal, Plug |