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MRA1417-6H

更新时间: 2024-11-20 22:15:11
品牌 Logo 应用领域
ASI 晶体晶体管射频
页数 文件大小 规格书
1页 30K
描述
NPN SILICON RF POWER TRANSISTOR

MRA1417-6H 技术参数

生命周期:Active包装说明:FLANGE MOUNT, S-CDFM-F2
针数:2Reach Compliance Code:unknown
风险等级:5.13外壳连接:BASE
最大集电极电流 (IC):1 A配置:SINGLE
最小直流电流增益 (hFE):10最高频带:L BAND
JESD-30 代码:S-CDFM-F2元件数量:1
端子数量:2最高工作温度:200 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:SQUARE
封装形式:FLANGE MOUNT极性/信道类型:NPN
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子形式:FLAT
端子位置:DUAL晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

MRA1417-6H 数据手册

  
MRA1417-6H  
NPN SILICON RF POWER TRANSISTOR  
DESCRIPTION:  
The MRA1417-6H is a Common  
Base Device Designed for Class C  
Amplifier Applications in L-Band FM  
Microwave Links.  
PACKAGE STYLE .250 2L FLG (B)  
FEATURES INCLUDE:  
Gold Metallization  
Emitter Ballasting  
Input Matching  
MAXIMUM RATINGS  
1.0 A  
IC  
50 V  
VCBO  
PDISS  
TJ  
19 W @ TC = 25 OC  
-65 OC to +200 OC  
-65 OC to +200 OC  
9.0 OC/W  
1 = COLLECTOR  
2 = BASE  
TSTG  
θJC  
3 = EMITTER  
CHARACTERISTICS TC = 25 O  
C
SYMBOL  
BVCBO  
TEST CONDITIONS  
MINIMUM TYPICAL MAXIMUM UNITS  
IC = 25 mA  
IC = 25 mA  
IE = 3.0 mA  
50  
V
V
V
55  
BVCES  
BVEBO  
3.5  
VCE = 5.0 V IC = 100 mA  
VCB = 28 V  
20  
100  
hFE  
Cob  
---  
f = 1.0 MHz  
6.5  
pF  
7.2  
7.5  
40  
PG  
dB  
%
VCE = 28 V POUT = 6.0 W f = 1400 - 1700 MHz  
ηC  
A D V A N C E D S E M I C O N D U C T O R, I N C.  
REV. A  
1/1  
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004  
Specifications are subject to change without notice.  

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